BFY90 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tamb = 25 k) unless otherwise specified)
Symbol Parameter Test Conditi ..
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BFX89-BFY90
Video Amplifier
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SGSra'ii'W(3lNSORl BFX89
iieilflCRl©Ell:aECTRaiillllCS BFY90
S G S-THOMSON
WIDE BAND VHF/UHF AMPLIFIER
n SILICON PLANAR EPITAXIAL TRANSISTORS
n TO-72 METAL CASE
a VERY LOW NOISE
APPLICATIONS I
n TELECOMMUNICATIONS
n WIDE BAND UHF AMPLIFIER
n RADIO COMMUNICATIONS
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The BFX89 and BFY90 are silicon planar epitaxial C
NPN transistors produced using interdigitated base
' emitter geometry. They are particulary designed for
use in wide band common-emitter linear amplifiers 8
up to 1 GHz. They feature very high fr, low reverse
capacitance, excellent cross modulation properties
and very low noise performance. The BFY90 is com- NPN E
plementary to the BFR99A. Typical applications in- tr- w"
clude telecommunication and radio communication
equipment.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vcao Collector-base Voltage (IE = 0) 30 V
VCER Collector-emitter Voltage (REE s. 50 n) 30 V
Vceo Collector-emitter Voltage (les = 0) 15 V
VEBo Emitter-base Voltage (Ic = 0) 2.5 V
Ic Collector Current 25 mA
ICM Collector Peak Current (f 2 1 MHz) 50 mA
Pun Total Power Dissipation at Tamb s 25 't) 200 mW
Tstg, Ti Storage and Junction Temperature - 65 to 200 ''C
November 1988 1/4
This Material Copyrighted By Its Respective Manufacturer
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THERMAL bATA
Ro Hrase Thermal Resistance Junction-case Max 580 °C/W
Ru. i-amb Thermal Resistance Junction-ambient Max 880 "C/IN
ELECTRICAL CHARACTERISTICS (Tamb = 25 RC) unless otherwise specified)
Symbol Parameter Test Conditions Mln. Typ. Max. Unlt
lcao Collector Cutoff Current Vcs = 15 V 10 nA
(ls = 0)
VCEK' Collector-emitter Knee
Voltage lo = 20 mA 0.75 V
hpe DC Current Gain lc = 2 mA VCE = 1 V
for BFX89 20 150
for BFY90 25 150
lc =25 mA ch =1 V 20 125
fr Transition Frequency I/cs 2: 5 V f = 500 MHz
[0 = 2 mA
for BFX89 1 GHz
for BFY90 1 1.1 GHz
Ic wa 25 mA
for BFX89 1.2 GHz
for BFY90 1.3 1.4 GHz
Ccao“) Collector-base Capacitance IE = 0 ch = 10 V
f = 1 MHz for BFX89 1.7 pF
for BFY90 1.5 pF
thei'0 Reverse Capacitance lc = 2 mA ch = 5 V
f = 1 MHz for BFX89 0.6 pF
for BFY90 0.6 0.8 pF
NF(2) Noise Figure IO = 2 mA VCE = 5 V
Ro == Optimized f = 100 kHz
for BFY90 Only 4 dB
f = 200 MHz
Ro = Optlmized for BFX89
for BFY90 3.3 4 dB
f = 500 MHz 2.5 3.5 dB
R9 = 50 n for BFX89
for BFY90 6.5 dB
f = BOO MHz 5 dB
R9 = Optimized for BFX89
for BFY90 7 dB
5.5 dB
696(2) Power Gain (not neutralized) for BFX89
IC=8mA Vce=10V
f = 200 MHz 19 22 dB
f = 800 MHz 7 dB
for BFY90
Ic=14mA Vce=10V
f "--" 200 MHz 21 23 dB
f =' 800 MHz 8 dB
. la = value for which 10 = 22 mA at ch =1 V (3) fp = 202 MHz, fq " 205 MHz, ie, p) = 208 MHz
(1) Shield lead not grounded (4) fp = 798 MHz, fq = 802 MHz, tarp; = 806 MHz
(2) Shield lead grounded
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This Material Copyrighted By Its Respective Manufacturer
