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BG3230R
RF-MOSFET
BG3230_BG3230R
DUAL N-Channel MOSFET Tetrode• Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
BG3230BG3230R
ESD: Electrostatic discharge sensitive device, observe handling precaution!180° rotated tape loading orientation available
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BG3230_BG3230R
Electrical Characteristics
DC Characteristics
BG3230_BG3230R
Electrical Characteristics
AC Characteristics - (verified by random sampling)
BG3230_BG3230R
Total power dissipation Ptot = ƒ(TS)
50
100
150
200
300
tot
Output characteristics ID = ƒ(VDS)
10
11
12
Gate 1 forward transconductancefs = ƒ(ID)
VDS = 5V, VG2S = Parameter
10
15
20
25
35
Drain current ID = ƒ(VG1S)DS = 5V
VG2S = Parameter
10
12
14
16
18
20
22
26
BG3230_BG3230R
AGC characteristic AGC = ƒ(VG2S)
f = 800 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
AGC
AGC characteristic AGC = ƒ(VG2S)
f = 200 MHz
-90
-80
-70
-60
-50
-40
-30
-20
AGC
Crossmodulation Vunw = (AGC)DS = 5 V, Rg1 = 68 kΩ
80
90
100
120
unw
BG3230_BG3230R
Cossmodulation test circuit
