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BGA2717
MMIC wideband amplifier
Product profile1.1 General descriptionSilicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features Internally matched to 50Ω Wide frequency range (3.2 GHz at 3 dB bandwidth) Flat 24 dB gain (±1 dB up to 2.8 GHz) −2.5 dBm output power at 1 dB compression point Good linearity for low current (IP3out = 10 dBm) Low second harmonic; −38 dBc at PD = −40 dBm Low noise figure; 2.3 dB at 1 GHz Unconditionally stable (K ≥ 2).
1.3 Applications LNB IF amplifiers Cable systems ISM General purpose.
1.4 Quick reference data
BGA2717
MMIC wideband amplifierThis device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1: Quick reference data DC supply voltage - 5 6 V supply current - 8 - mA
s212 insertion power gain f = 1 GHz - 24 - dB noise figure f = 1 GHz - 2.3 - dB
PL(sat) saturated load power f = 1 GHz - 1 - dBm
Philips Semiconductors BGA2717 Pinning information Ordering information Marking Limiting values
Table 2: Pinning1VS
2, 5 GND2 RF_OUT GND1 RF_IN
SOT363
sym052
Table 3: Ordering informationBGA2717 - plastic surface mounted package; 6 leads SOT363
Table 4: MarkingBGA2717 1B-
Table 5: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). DC supply voltage RF input AC
coupled V supply current - 15 mA
Ptot total power dissipation Tsp ≤ 90°C - 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C maximum drive power - −10 dBm
Philips Semiconductors BGA2717 Thermal characteristics Characteristics
Table 6: Thermal characteristicsRth(j-sp) thermal resistance from junction
to solder point
Ptot = 200 mW;
Tsp≤90°C
300 K/W
Table 7: CharacteristicsVS = 5 V; IS = 8 mA; Tj = 25 °C; measured on demo board; unless otherwise specified. supply current 6 8 10 mA
s212 insertion power
gain
f = 100 MHz 18 18.6 20 dB
f = 1 GHz 23 23.9 25 dB
f = 1.8 GHz 24 25 27 dB
f = 2.2 GHz 24 25.1 27 dB
f = 2.6 GHz 22 24 26 dB
f = 3 GHz 20 22.1 24 dB
s112 input return
losses
f = 1 GHz 15 19 - dB
f = 2.2 GHz 8 9.4 - dB
s222 output return
losses
f = 1 GHz 8 10 - dB
f = 2.2 GHz 5 6.8 - dB
s122 isolation f = 1.6 GHz 54 55 - dB
f = 2.2 GHz 38 39 - dB noise figure f = 1 GHz - 2.3 2.5 dB
f = 2.2 GHz - 2.9 3.1 dB bandwidth at s212−3dB belowflat
gain at 1 GHz 3.2 - GHz stability factor f = 1 GHz - 13 -
f = 2.2 GHz - 1.7 -
PL(sat) saturated load
power
f = 1 GHz 0 1.4 - dBm
f = 2.2 GHz −1 +0.1 - dBm
PL(1dB) load power at1dB gain compression;
f = 1 GHz −2.6 - dBm1dB gain compression;= 2.2 GHz −3.1 - dBm
IM2 second order
intermodulation
product
at PD = −40 dBm;=1 GHz 38 - dBc
IP3in input, third
order intercept
point
f = 1 GHz −15 −13.9 - dBm
f = 2.2 GHz −20 −18.8 - dBm
IP3out output, third
order intercept
point
f = 1 GHz 9 10 - dBm
f = 2.2 GHz 4 6.3 - dBm
Philips Semiconductors BGA2717 Application informationFigure 1 shows a typical application circuit for the BGA2717 MMIC. The device is
internally matchedto50Ω, and therefore does not need any external matching. The value the input and output DC blocking capacitors C2 and C3 should notbe more than 100pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The printed-circuit board (PCB) top ground plane, connectedto pins2,4 and5 mustbeas
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
Figure 2 shows the PCB layout, used for the standard demonstration board.
Philips Semiconductors BGA2717
8.1 Grounding and output impedanceIf the grounding is not optimal, the gain becomes less flat and the 50 Ω output matching
becomes worse. If a better output matching to 50 Ω is required, a 12 Ω resistor (R1) can
be placed in series with C3 (see Figure 3). This will significantly improve the output
impedance, at the cost of 1 dB gain and 1 dB output power.
Philips Semiconductors BGA2717
8.2 Application examplesThe MMIC is very suitable as IF amplifier in e.g. LNBs. The excellent wideband
characteristics makeitan ideal building block (see Figure 4).As second amplifier afteran
LNA, the MMIC offers an easy matching, low noise solution (see Figure 5).
Philips Semiconductors BGA2717
