BGA416 ,Silicon MMICs
BGA416 ,Silicon MMICs
BGA420 ,Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
BGA420 ,Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
BGA420E6327 , Si-MMIC-Amplifier in SIEGET 25-Technologie
BGA430 ,Silicon MMICs
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BSN254 ,N-channel enhancement mode vertical D-MOS transistor
BSN254A ,N-channel enhancement mode vertical D-MOS transistor
BSN254A ,N-channel enhancement mode vertical D-MOS transistor
BSN254A ,N-channel enhancement mode vertical D-MOS transistor
BSN254A ,N-channel enhancement mode vertical D-MOS transistor
BGA416
Silicon MMICs
BGA416
RF Cascode Amplifierthinking.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA416
Data sheet
Revision History:2002-06-14 Previous Version:2001-10-30
Data sheet4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
RF Cascode Amplifier BGA416
Features•GMA = 23dB at 900MHzUltra high reverse isolation,
62 dB at 900MHzLow noise figure,
F50Ω = 1.3dB at 900MHzOn chip bias circuitry,
5.5 mA bias current at VCC = 3VTypical supply voltage: 2.5 to 5.0V
SIEGET®-25 technology
ApplicationsBuffer amplifiersLNAsOscillator active devices
DescriptionBGA416 is a monolithic silicon cascode
amplifier with high reverse isolation. A
bias network is integrated for simplified
biasing.
Data sheet5
Maximum RatingsNotes:
All Voltages refer to GND-Node
1) Device current is equal to current into pin RFout
2) TS is measured on the ground lead at the soldering point
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1) CC=3V, unless otherwise specified
Data sheet6
S-Parameter VCC=3V, ID=5.5mA (see Electrical Characteristics for conditions)
Fig. 1: Test Circuit for Electrical Characteristics and S-Parameter