BGB420 E6327 ,MMIC, LNA
BGB420E6327 ,MMIC, LNA
BGB540 ,Silicon MMICs
BGC405 ,Active Biased RF Transistor (RF MMIC)BGC405Self-Biased BFP40556
BGB420 E6327-BGB420E6327
Silicon MMICs
BGB420
Active Biased Transistorthinking.
For questions on technology, delivery and prices please contact the InfineonTechnologies Offices in Germany or the Infineon Technologies Companies andRepresentatives worldwide: see our webpage at http://www.infineon.com
BGB420
Data sheet
Revision History:2001-08-10 Previous Version:2000-11-28
Data sheet42001-08-10
ESD: Electrostatic discharge sensitive device, observe handling precaution!
BGB420 Active Biased Transistor BGB420
FeaturesFor high gain low noise amplifiersIdeal for wideband applications, cellular telephones,
cordless telephones, SAT-TV and high frequency
oscillators
Gma=17.5dB at 1.8GHzSmall SOT343 packageCurrent easy adjustable by an external resistorOpen collector outputTypical supply voltage: 1.4-3.3V
SIEGET®-25 technology
DescriptionSIEGET®-25 NPN Transistor with integrated
biasing for high gain low noise figure
applications. IC can be controlled using IBias
according to IC=10*IBias .
Data sheet52001-08-10
Maximum RatingsNotes:
For detailed symbol description refer to figure 1. TS is measured on the emitter lead at the soldering point to the PCB
Fig. 1: Symbol definition
Data sheet6 2001-08-10
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2, min./max. values verified by random sampling)
Bias
Bias,4C,3
B,1E,2
IBiasIC
Bias-TRF Out
Bias-T
N.C.RF In
RBias
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
