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BGM1014NXPN/a27000avaiMMIC wideband amplifier


BGM1014 ,MMIC wideband amplifierApplications LNB Intermediate Frequency (IF) amplifiers Cable systems General purpose1.4 Quick r ..
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BGM1014
MMIC wideband amplifier
1. Product profile
1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
1.2 Features and benefits
Internally matched to 50 Good output match to 75 32 dB to 34 dB positive sloped gain for Low Noise Block (LNB) application 12.9 dBm saturated load power at 1 GHz 40 dB isolation
1.3 Applications
LNB Intermediate Frequency (IF) amplifiers Cable systems General purpose
1.4 Quick reference data

BGM1014
MMIC wideband amplifier
Rev. 2 — 19 September 2011 Product data sheet
Table 1. Quick reference data
DC supply voltage RF input; AC coupled - 5 6 V DC supply current 17 21.0 25 mA
s212 insertion power gain f=1 GHz 31.5 32.3 33.0 dB noise figure f=1 GHz - 4.2 4.3 dB
PL(sat) saturated load power f=1 GHz 12.5 12.9 - dBm
NXP Semiconductors BGM1014
MMIC wideband amplifier
2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Recommended operating conditions

Table 2. Pinning
Table 3. Ordering information

BGM1014 SC-88 plastic surface mounted package; 6 leads SOT363
Table 4. Marking

BGM1014 C5-
Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). DC supply voltage RF input; AC coupled - 6 V supply current - 30 mA
Ptot total power dissipation Tsp90C - 200 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C maximum drive power - 10 dBm
Table 6. Operating conditions
DC supply voltage 4.5 5.0 5.5 V
Tamb ambient temperature 40 +25 +85 C
NXP Semiconductors BGM1014
MMIC wideband amplifier
7. Thermal characteristics

8. Characteristics

Table 7. Thermal characteristics

Rth(j-sp) thermal resistance from junction to solder point Ptot= 200 mW; Tsp90 C300 K/W
Table 8. Characteristics
=5 V; IS= 21.1 mA; Tj =25 C; measured on demo board; unless otherwise specified. DC supply voltage RF input; AC coupled - 5 6 V supply current 17 21.0 25 mA
s212 insertion power gain see Figure4= 100 MHz 29.0 30.0 31.0 dB=1 GHz 31.5 32.3 33.0 dB= 1.8 GHz 34.0 35.2 36.5 dB= 2.2 GHz 33.0 34.1 35.5 dB= 2.6 GHz 29.0 30.5 32.0 dB=3 GHz 25.0 26.4 28.0 dB
s112 input return loss f=1 GHz 11 12.2 - dB= 2.2 GHz 7.5 8.8 - dB
s222 output return loss ZL =50 1GHz 15 18.9 - dB= 2.2 GHz 12 16.7 - dB =75 1GHz 12 16.8 - dB= 2.2 GHz 12 17.7 - dB
s122 isolation see Figure3 1GHz 40 42 - dB= 2.2 GHz 35 37 - dB noise figure see Figure7 1GHz - 4.2 4.3 dB= 2.2 GHz - 4.1 4.3 dB bandwidth 3 dB below flat gain at f=1 GHz - 2.5 - GHz stability factor see Figure8 1GHz 1.5 1.6 -= 2.2 GHz 0.9 1.0 -
PL(sat) saturated load power f=1 GHz 12.5 12.9 - dBm= 2.2 GHz 8.8 9.3 - dBm
PL(1dB) load power at 1 dB gain
compression 1GHz 10.5 11.2 - dBm= 2.2 GHz 5.0 5.7 - dBm
NXP Semiconductors BGM1014
MMIC wideband amplifier

IP3in input third order intercept point f=1 GHz 13 11.8 - dBm 2.2GHz 21 19 - dBm
IP3out output third order intercept pointf=1 GHz 19.5 20.5 - dBm= 2.2 GHz 14 15.1 - dBm
IM2 second order intermodulation
distortion=1 GHz; PL= 10 dBm 36 37 - dBc=1 GHz; PL=5 dBm 33 34 - dBc
Table 8. Characteristics …continued
=5 V; IS= 21.1 mA; Tj =25 C; measured on demo board; unless otherwise specified.
NXP Semiconductors BGM1014
MMIC wideband amplifier

NXP Semiconductors BGM1014
MMIC wideband amplifier

NXP Semiconductors BGM1014
MMIC wideband amplifier
9. Application information

Figure 9 shows a typical application circuit for the BGM1014 MMIC. The device is
internally matched to 50  and therefore does not need any external matching. Good
impedance matching is also achieved with a 75  load. The value of the input and output
DC blocking capacitors C1 and C2 should be not more than 100 pF for applications above
100 MHz. Their values can be used to fine-tune the input and output impedance.
For the RF choke, optimal results are obtained with a good quality chip inductor like the
TDK MLG1608 (0603) or a wire-wound SMD. The value of the inductor can be used to
fine-tune the output impedance.
The RF choke and supply decoupling components should be located as close as possible
to the MMIC.
Ground paths must be as short as possible. The printed-circuit board (PCB) top ground
plane must be as close as possible to the MMIC, and ideally directly beneath it. When
using vias, use at least 3 vias for the top ground plane in order to limit ground path
inductance. Supply decoupling with C3 should be from pin 1 to the same top ground
plane.
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