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BGY66B
120 MHz, 25 dB gain reverse amplifier
Philips Semiconductors Product specification
120 MHz, 25 dB gain reverse amplifier BGY66B
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures
excellent reliability.
APPLICATIONS Intended as a reverse amplifier for
use in two-way systems.
DESCRIPTIONHybrid high dynamic range amplifier
module designed for applications in
CATV systems with a bandwidth ofto 120 MHz operating with a
voltage supply of 24V (DC).
PINNING - SOT115J
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors Product specification
120 MHz, 25 dB gain reverse amplifier BGY66B
CHARACTERISTICS
Table 1 Bandwidth 5to 120 MHz; VB=24 V; Tmb =30 °C; ZS =ZL =75Ω
Notes fp= 55.25 MHz; Vp=48 dBmV;= 61.25 MHz; Vq=48 dBmV;
measured at fp +fq= 116.5 MHz. Measured according to DIN45004B:= 111.25 MHz; Vp =Vo;= 118.25 MHz; Vq =Vo−6 dB;= 120.25 MHz; Vr =Vo−6 dB;
measured at fp +fq−fr= 109.25 MHz. The module normally operates at VB=24 V, but is able to withstand supply transients up to 30V.
Philips Semiconductors Product specification
120 MHz, 25 dB gain reverse amplifier BGY66B
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
Philips Semiconductors Product specification
120 MHz, 25 dB gain reverse amplifier BGY66B
DATA SHEET STATUS
Notes Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL .
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device theseorat any other conditions abovethosegivenin the
Characteristics sectionsof the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make representationor warranty thatsuch applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonablybe expectedto resultin personal injury. Philips
Semiconductors customers usingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the rightto make changes, without notice,in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the useof anyof these products, conveysno licence ortitle
under any patent, copyright, or mask work right to these
products, and makesno representationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Philips Semiconductors Product specification
120 MHz, 25 dB gain reverse amplifier BGY66B
NOTES
