BZW50-56 ,TRANSILABSOLUTE MAXIMUM RATINGS (T = 25°C)ambSymbol Parameter Value UnitP Peak pulse power dissipation (se ..
BZW50-68 ,TRANSILFEATURESn PEAK PULSE POWER : 5000 W (10/1000μs)n STAND-OFF VOLTAGE RANGE :From 10V to 180Vn UNI AND ..
BZW50-82B ,TRANSIL®BZW50-10,B/180,BTMTRANSIL
BZX284-B10 ,Voltage regulator diodesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZX284-B10 ,Voltage regulator diodesAPPLICATIONS• General regulation functions.bottom view side view top view MAM219Fig.1 Simplified o ..
BZX284-B11 ,Voltage regulator diodesFEATURES DESCRIPTION• Total power dissipation: Low-power voltage regulator diodes in a small cerami ..
CA3046M96 ,General Purpose NPN Transistor ArraysCA3045, CA3046Data Sheet September 1998 File Number 341.4General Purpose NPN Transistor Arrays
CA3054M96 ,Dual Independent Differential Amp for Low Power Applications from DC to 120MHzapplications where matched performance of the two• Product Detectorschannels is required.• Doubly B ..
CA3059 ,ZERO VOLTAGE SWITCHON SemiconductorCA3059Zero Voltage SwitchThis series is designed for thyristor control in a variet ..
CA3060E ,110kHz, Operational Transconductance Amplifier Arrayapplications of the OTA are described in AN-6668.For improved input operating ranges, refer to CA30 ..
CA3060E ,110kHz, Operational Transconductance Amplifier ArrayApplications 1-800-442-7747or email:
[email protected]+CA3060Absolute Maximum Ratings Operating C ..
CA3060E ,110kHz, Operational Transconductance Amplifier ArrayFeatures Description• Low Power Consumption as Low as 100mW Per The CA3060 monolithic integrated ci ..
BZW50-15-BZW50-18-BZW50-56-BZW50-68-BZW50-82B
TRANSIL
BZW50-10,B/180,BTRANSILTM PEAK PULSE POWER: 5000W (10/1000μs) STAND-OFF VOLTAGE RANGE:
From 10Vto 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED
FEATURES
Note1: Fora surge greater than the maximum values,the diodewillfailin short-circuit.
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
DESCRIPTIONTransil diodes provide high overvoltage protection clamping action. Their instantaneous response transient overvoltages makes them particu-
larly suitedto protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
THERMAL RESISTANCES
BZW50-10,B/180,B
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
Note2: Pulse test:tp <50ms.
Note3: ΔVBR= αT* (Tamb-25)* VBR(25°C)
Note4: VR=0V,F=1 MHz.For bidirectional types,
capacitance valueis dividedby2.
Fig.1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
1000s
%IPP t
100
BZW50-10,B/180,B
0.001 0.01 0.1 1 10 100
1E2
1E3
1E4
1E5
1E6
1E7 (W)
Fig.2: Peak pulse power versus exponential pulse duration.
Fig.3: Clamping voltage versus peak pulse current.
Exponential waveform tp =20 μs________=1 ms—————-=10 ms...............
Note: The curvesof the figure3 are specifiedfora junction temperatureof 25°C before surge.
The given results maybe extrapolated for other junction temperaturesby using the following formula:ΔVBR= αT* (Tamb -25)* VBR (25°C).
For intermediate voltages, extrapolate the given results.
BZW50-10,B/180,B
Fig.6: Transient thermal impedance junc-
tion-ambient versus pulse duration (For FR4 PC
Board withL lead= 10mm).
Fig.5: Peak forward voltage drop versus peak
forward current (typical values for unidirectional
types).
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Note: Multiplyby2for units with VBR >220V.
Fig.7: Relative variationof leakage current
versus junction temperature.
BZW50-10,B/180,B
Packaging: standard packagingis tape and reel.
ORDER CODE
Weight= 2.048g.
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
Informationfurnishedis believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patentsorotherrightsof third partieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2003 STMicroelectronics- Printedin Italy-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Brazil- Canada- China- Finland- France- Germany
Hong Kong- India- Israel- Italy- Japan- Malaysia- Malta- Morocco- Singapore
Spain- Sweden- Switzerland- United Kingdom- United States.
http://
PACKAGE MECHANICAL DATA (Plastic)
:
www.ic-phoenix.com
.
