DS90LV017ATMX/NOPB ,Single High Speed Differential Driver 8-SOIC -40 to 85 SNLS022C –MARCH 2000–REVISED APRIL 2013Switching Characteristics(1)(2)(3)(4)Over Supply Voltage an ..
DS90LV017ATMX/NOPB ,Single High Speed Differential Driver 8-SOIC -40 to 85FEATURES DESCRIPTIONThe DS90LV017A is a single LVDS driver device2• >600 Mbps (300 MHz) Switching R ..
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DS90LV018ATM ,3V LVDS Single CMOS Differential Line ReceiverFeatures>n 400 Mbps (200 MHz) switching ratesThe DS90LV018Ais a single CMOS differential line recei ..
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DS90LV017ATMX/NOPB
Single High Speed Differential Driver 8-SOIC -40 to 85
DS90LV017A
www.ti.com SNLS022C –MARCH 2000–REVISED APRIL 2013
DS90LV017A LVDS Single High Speed Differential Driver
Checkfor Samples: DS90LV017A
1FEATURES DESCRIPTIONThe DS90LV017Aisa single LVDS driver device
>600 Mbps (300 MHz) Switching Rates optimized for high data rate and low power
• 0.3 ns Typical Differential Skew applications. The DS90LV017Aisa current mode
0.7 ns Maximum Differential Skew driver allowing power dissipationto remain low even high frequency.In addition, the short circuit fault
• 1.5 ns Maximum Propagation Delay currentis also minimized. The deviceis designedto
• 3.3V Power Supply Design support data ratesin excessof 600Mbps (300MHz)
• ±355 mV Differential Signaling utilizing Low Voltage Differential Signaling (LVDS)
technology.
• Low Power Dissipation (23 mW@ 3.3V Static) Flow-Through Design Simplifies PCB Layout The device is ina 8-lead SOIC package. The
DS90LV017A hasa flow-through design for easy
• Interoperable with Existing 5V LVDS Devices PCB layout. The differential driver outputs provides
• Power Off Protection (Outputsin High low EMI withits typical low output swingof 355 mV.
Impedance) The DS90LV017A can be paired withits companion
Conformsto TIA/EIA-644 Standard single line receiver, the DS90LV018A,or with anyof
TI's LVDS receivers,to providea high-speed point-to-
• 8-Lead SOIC Package Saves Space point LVDS interface.
• Industrial Temperature Operating Range (−40°Cto +85°C)
Connection Diagram
Figure1. Dual-In-Line
See Package NumberD (R-PDSO-G8) protection. The leads shouldbe shorted together electrostatic damagetothe MOS gates.
