FDS7788_NL ,30V N-Channel PowerTrench MOSFETFDS7788February 2005FDS7788Ò30V N-Channel PowerTrench MOSFET
FDS8333C ,30V N & P-Channel PowerTrench MOSFETsElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Min Ty ..
FDS8333C ,30V N & P-Channel PowerTrench MOSFETsapplications where low in-line power loss and fast switching are • High performance trench technolo ..
FDS8433A ,Single P-Channel 2.5V Specified MOSFETGeneral Description• -5 A, -20 V. R = 0.047 Ω @ V = -4.5 VThis P-Channel enhancement mode power fie ..
FDS8433A_NL ,Single P-Channel 2.5V Specified MOSFETApplications• Load switch• DC/DC converter• Battery protectionD5 4DDD 6 372GS18SSO-8 ST = 25°C unle ..
FDS8449 ,40V N-Channel PowerTrench?MOSFETFeatures These N-Channel MOSFETs are produced using • 7.6 A, 40V R = 29mΩ @ V = 10V DS(on) GSFairch ..
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS7788-FDS7788_NL
30V N-Channel PowerTrench MOSFET
FDS7788 February 2005 FDS7788 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 18 A, 30 V. R = 4.0 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 5.0 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · Fast switching speed Applications · High power and current handling capability · DC/DC converter · High performance trench technology for extremely · Load switch low R DS(ON) · Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 18 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 PD W (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 qJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7788 FDS7788 13’’ 12mm 2500 units Ó2005 FDS7788 Rev F (W)
