FDT459N ,N-Channel Enhancement Mode Field Effect Transistorapplications such assurface mount package.notebook computer power management, battery poweredcircui ..
FDT459N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
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FDT459N
N-Channel Enhancement Mode Field Effect Transistor
March 1998 FDT459N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 6.5 A, 30 V. R = 0.035W @ V = 10 V DS(ON) GS transistors are produced using Fairchild's proprietary, high R = 0.055 W @ V = 4.5 V. DS(ON) GS cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, High density cell design for extremely low R . DS(ON) provide superior switching performance. These products are High power and current handling capability in a widely used well suited to low voltage, low current applications such as surface mount package. notebook computer power management, battery powered circuits, and DC motor control. TM TM TM SuperSOT -3 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 SOIC-16 D D S G D S G o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter FDT459N Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage - Continuous ±20 V V GSS I Maximum Drain Current - Continuous (Note 1a) 6.5 A D - Pulsed 20 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W qJC * Order option J23Z for cropped center drain lead. FDT459NRev.C © 1998
