FJAF4210OTU ,PNP Epitaxial Silicon TransistorFJAF4210FJAF4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation• ..
FJAF4210RTU ,PNP Epitaxial Silicon TransistorFJAF4210FJAF4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation• ..
FJAF4310 ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF4310OTU ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF4310YTU ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF6806D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)FJAF6806DFJAF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FST16245MTD ,16-Bit Bus SwitchFeaturesThe Fairchild Switch FST16245 provides 16-bits of high- 4Ω switch connection between two ..
FST16245MTDX ,16-Bit Bus SwitchElectrical CharacteristicsT = −40°C to +85°CASymbol Parameter V Min Typ Max Units ConditionsCC(V) ( ..
FST162861 ,20-Bit Bus Switch with 25-Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST162861 provides 20-Bits of high-
FJAF4210OTU-FJAF4210RTU
PNP Epitaxial Silicon Transistor
FJAF4210 FJAF4210 Audio Power Amplifier • High Current Capability : I = -10A C • High Power Dissipation •Wide S.O.A • Complement to FJAF4310 TO-3PF 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -10 A C I Base Current (DC) -1.5 A B P Collector Dissipation (T =25°C) 80 W C C R Junction to Case 1.33 °C/W θJC T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -200 V CBO C E BV Collector-Emitter Breakdown Voltage I =-50mA, R =∞ -140 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -6 V EBO E C I Collector Cut-off Current V =-200V, I =0 -10 μA CBO CB E I Emitter Cut-off Current V =-6V, I =0 -10 μA EBO EB C h * DC Current Gain V =-4V, I =-3A 50 180 FE CE C V (sat) Collector-Emitter Saturation Voltage I =-5A, I =-0.5A -0.5 V CE C B C Output Capacitance V =-10V, f=1MHz 400 pF ob CB f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C * Pulse Test : PW=20μs h Classification FE Classification R O Y h 50 ~ 100 70 ~ 140 90 ~ 180 FE ©2002 Rev. A, November 2002
