FQB34N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 VDS(on) ..
FQB34P10 ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB34P10TM ,100V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -33.5A, -100V, R = 0.06Ω @V = -10 VDS ..
FQB3N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 250V, R = 2.2Ω @V = 10 VDS(on) ..
FQB3N25TM ,250V N-Channel QFETNovember 2000TMQFET QFET QFET QFETFQB3N25 / FQI3N25250V N-Channel MOSFET
FQB3N30 ,300V N-Channel MOSFET
G6AK-274P-STLT-US-DC5 , Fullly Sealed Relay with High Impulse Withstand
G6H-2F , Low Profile, Miniature, Surface Mount Relay
G6H-2F5VDC , Low Profile, Miniature, Surface Mount Relay
G6J-2FL-Y , Surface-mounting Relay
G6XB60 , SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A
G751-2 , Digital Temperature Sensor and Thermal Watchdog with Two-Wire Interface
FQB34N20LTM
200V N-Channel Logic Level QFET
June 2000 TM QFET QFET QFET QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 200V, R = 0.075Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 55 nC) planar stripe, DMOS technology. • Low Crss ( typical 52 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well • Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. D D ! ! "" !!"" "" G! ! "" G S 2 2 D -PAK I -PAK G D S ! ! FQB Series FQI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter FQB34N20L / FQI34N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 31 A D C - Continuous (T = 100°C) 20 A C I (Note 1) Drain Current - Pulsed 124 A DM V Gate-Source Voltage ± 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 640 mJ AS I Avalanche Current (Note 1) 31 A AR E (Note 1) Repetitive Avalanche Energy 18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 180 W C - Derate above 25°C 1.43 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.7 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, June 2000 FQB34N20L / FQI34N20L
