HN1A01FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN1A01FU ,Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO =−50V, IC =−150m ..
HN1B01F ,Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) ..
HN1B04F ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HN1B04FE ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) 6 5 4 Characteristic Symbol Rating Unit Collector power dissi ..
HN1C01F ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier ApplicationsApplications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150m ..
HX8802-C , CVBS
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1A01FE
Transistor for low frequency small-signal amplification 2 in 1
HN1A01FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01FE Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current
: VCEO = −50V, IC = −150mA (max)
z High hFE: hFE = 120 to 400
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Note: hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400 ( ) Marking Symbol
Marking Equivalent Circuit (Top View) Weight: 3.0mg (typ.)
Unit: mm
