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HN1C01FE
Transistor for low frequency small-signal amplification 2 in 1
HN1C01FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01FE Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current
: VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120 to 400
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Note: hFE Classification Y (Y): 120 to 240, GR (G): 200 to 400 ( ) Marking Symbol
Marking Equivalent Circuit (Top View)Weight: 3.0mg(typ.)
Unit: mm5 6
Type Name
hFE Rank 56
