HN1C05FE ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ ..
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HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
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HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1C05FE
Transistor for low frequency small-signal amplification 2 in 1
HN1C05FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C05FE Low Frequency Amplifier Applications
Muting Application
Switching Application Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.)
:@ IC = 10mA/ IB = 0.5mA High Collector Current : IC = 400mA (max)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* :Total rating.
Marking Equivalent Circuit (Top View) Weight: 3.0 mg (typ.)
Unit: mm 2 356 2 3 5 6
Type Name
hFE Rank