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HN1C26FS
Transistor for low frequency small-signal amplification 2 in 1
HN1C26FS
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C26FS Frequency General-Purpose Amplifier Applications • Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package. High voltage : VCEO = 50 V High current : IC = 100 mA (max)
• High hFE : hFE = 120 to 400
• Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Electrical Characteristics (Ta = 25°C) Note: hFE Classification Y (F): 120 to 240, GR (H): 200 to 400 ( ) Marking symbol
Marking Equivalent Circuit (top view) Unit: mm
Weight: 0.001 g (typ.) 56Type Name
hFE Rank
