HN1D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio ..
HN1D02FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FU Ultra High Speed Switching Applicatio ..
HN1D03F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mmUltra High Speed Switching App ..
HN1D03FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mmUltra High Speed Switching A ..
HN1D04FU ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1J02FU ,Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance Low threshold voltage: Vth =−0.5V~−1.5V High speed Sm ..
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1D02FU
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
HN1D02FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02FU Ultra High Speed Switching Application HN1D02FU is composed of 2 unit of cathode common. Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25��� �C)
*: This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or
simultaneously, the Maximum Ratings per diode is 75% of the
single diode one.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25��� �C)
VF (1) ―� IF = 10mA (fig.1)
Weight: 6.8mg
Unit in mm
000707EAA1
