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HN1K05FU
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications
HN1K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU For Portable Devices High Speed Switching Applications
Interface Applications High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 common) Tstg
Note: TOTAL rating
Electrical Characteristics (Ta ��� � 25°C) (Q1, Q2 common)
Unit: mm
Weight: 6.8 mg
