HN2D02FUTW1T1 ,Ultra High Speed Switching DiodesELECTRICAL CHARACTERISTICS (T = 25C)ACharacteristic Symbol Condition Min Max UnitReverse Voltage L ..
HN2E05J , MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
HN2S01F ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Swit ..
HN2S01FU ,Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching ApplicationHN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mmLow Voltage High ..
HN2S02FU ,Small-signal Schottky barrier diodeElectrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C) TestCharacteristic Symbol Test Condition ..
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2D02FUTW1T1
Ultra High Speed Switching Diodes
HN2D02FUTW1T1G,
SHN2D02FUTW1T1G
Ultra High Speed
Switching DiodesThese Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−88 package which is designed for low power surface mount
applications.
Features Fast trr, < 3.0 ns Low CD, < 2.0 pF AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25C)Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. This is maximum rating for a single diode. In the case of using 2 or 3 diodes,the maximum ratings per diodes is 75% of the single diode.
THERMAL CHARACTERISTICS
