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HN2S03TTOSHIBAN/a178500avaiSmall-signal Schottky barrier diode


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HN2S03T
Small-signal Schottky barrier diode
HN2S03T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03T

High Speed Switching Application Two independent diodes are mounted on Thin Extreme Super Mini Quad
package that are suitable for higher mounting densities. Low forward voltage : VF (3) = 0.50V (typ.) Low reverse current : IR= 0.5μA (max) Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Q1, Q2 Common, Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). : Unit rating. Total rating = Unit rating x 1.5
**: Total rating
Electrical Characteristics (Q1, Q2 Common, Ta = 25°C)

Weight: 1.5 mg (typ.)
Unit: mm
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