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HN3A51F
Transistor for low frequency small-signal amplification 2 in 1
HN3A51F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN3A51F Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V
z High hFE : hFE = 200 to 700
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) Low noise : NF = 1dB (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Marking Equivalent Circuit (top view) Weight: 0.015 g (typ.)
Unit: mm 54
