HN3C10F ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mmIncluding Two Devices in SM6 (Super Mini Type with 6 Leads)MAXIMUM RATINGS ( ..
HN3C10FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HN3C10FU ,RF 2-in-1 Hybrid TransistorsHN3C1OFUTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER
HN3C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN3G01J ,N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTORAPPLICATIONSINT s.,-,,.,,-)))- l E5'1IIMAXIMUM RATINGS (Ta = 25°C)Q1CHARACTERISTIC SYMBOL RATING UN ..
HN462716 , 2048-WORD x 8-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE ONLY MEMORY
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN3C10F
RF 2-in-1 Hybrid Transistors
TOSHIBA HN3C1OF
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
HNBC’IIDF
l/HF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Including Two Devices in SM6 (Super Mini Type with 6 Leads) . :0'2
1.6Lijrl
MAXIMUM RATINGS (Ta =25°C)
m CE- TI
CHARACTERISTIC SYMBOL RATING UNIT g g g 1 6 o
+I +I CHE- I TI t,l
Collector-Base Voltage VCBO 20 V S 3 g 2 5__
Collector-Emitter Voltage VCEO 12 V s-" _ T,I=
Emitter-Base Voltage VEBO 3 V Je.
Base Current IB 40 mA gg, l 'ti'
Collector Current IC 80 mA *1 i l _c,
Collector Power Dissipation PC'' 300 mW F ' 1. -
. . o l
Junction Temperature Tj 125 C 1. COLLECTOR 1 (C 1) 0
Storage Temperature Range Tseg -55--125 "C 2. EMITTER 1 (E1)
3. COLLECTOR 2 (C2)
* : Total 4. EMITTER 2 (E2)
5. BASE 2 (B2)
MARKING PIN ASSIGNMENT (TOP VIEW) b. BASE 1 (B1)
6 5 4 Type Name g, g, A JEDEC -
/ EIAJ -
IN L Q1 Q2 TOSHIBA 2-3N1B
txt I: txt
txt I:l txi
1 2 3 1 2 3
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 PA
Emitter Cut-off Current IEBO VEB=1V, Iczo - - 1 PA
DC Current Gain hFE VCE=10V, 10:20mA 80 - 240 -
Transition Frequency fT VCE=10V, Ic=20mA 5 7 - GHz
Insertion Gain ISZIel2 VCE=10V, IC=20mA, f=1GHz 8 11.5 - dB
Noise Figure NF VCE=10V, IC=5rnA, f = 1GHz - 1.1 2 dB
Reverse Transfer Capacitance Cre - 0.7 1.2 pF
Q1 VCB=10V, IE=0, f=1MHz
Reverse Transfer Capacitance Cre ( o e) - 0.65 1.15 pF
(Note) ore is measured by 3 terminal method capacitance bridge.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
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