HN4A06J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4A06J. ,Transistor for low frequency small-signal amplification 2 in 1Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-b ..
HN4A08J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4A51J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4A56JU ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4B04J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V281620ALT-P , 4 Banks x 2M x 16bits Synchronous DRAM
HN4A06J-HN4A06J.
Transistor for low frequency small-signal amplification 2 in 1
HN4A06J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A06J Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V
z High hFE : hFE = 200 to 700
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Marking Equivalent Circuit (Top View) Weight: 0.014g (typ.)
Unit: mm5