HN4A56JU ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4B04J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
HN4B101J ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Ta = 25°C) Rating 1. Base (PNP) Characteristic Symbol Unit 2. Emitter (PN ..
HN4B101J ,Power transistor for high-speed switching applicationsabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
HN4C51J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) TestCharacteristic Symbol Test Condition Min ..
HN4D01JU ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HY53C256 , 256K x 1-Bit CMOS DRAM
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HY57V281620ALT-P , 4 Banks x 2M x 16bits Synchronous DRAM
HN4A56JU
Transistor for low frequency small-signal amplification 2 in 1
HN4A56JU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A56JU Audio Frequency General Purpose Amplifier Applications Small Package (Dual Type) High Voltage and High Current
: VCEO= −50V, IC = −150mA (max)
z High hFE
z Excellent hFE Linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating: Power dissipation per element should not exceed 130mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common) Marking Equivalent Circuit (Top View) Weight: 0.0062g (typ.)
Unit: mm5
