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HN4B04JTOSHIBAN/a12000avaiTransistor for low frequency small-signal amplification 2 in 1


HN4B04J ,Transistor for low frequency small-signal amplification 2 in 1Electrical Characteristics Q1 (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max Uni ..
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HN4B04J
Transistor for low frequency small-signal amplification 2 in 1
HN4B04J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B04J

Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
z Excellent hFE linearity
: hFE(2) =25 (min) at VCE = −6V, IC = −400mA
Q2:
z Excellent hFE linearity
: hFE(2) =25 (min) at VCE = 6V, IC = 400mA
Q1 Absolute Maximum Ratings (Ta = 25°C)

Q2 Absolute Maximum Ratings (Ta = 25°C)

Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc). Total rating. Power dissipation per element should not exceed 200mW.
Weight: 0.014g (typ.)
Unit: mm
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