HN4D02JU ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HN4K03JU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance Low gate threshold voltage: V = 0.5~1.5V thExcellent sw ..
HN58C1001T-15 , 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function
HN58C1001T-15 , 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function
HN58C256AT-10 , 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)
HN58C65FP-25 , 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-6 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V161610ET-8 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HY57V281620ALT-P , 4 Banks x 2M x 16bits Synchronous DRAM
HN4D02JU
Switching diode
HN4D02JU TOSHIBA Diode Silicon Epitaxial Planar Type
HN4D02JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating; Total rating = unit rating × 1.5 ** :Total rating
Electrical Characteristics (Ta = 25°C) Fig. 1 Reverse Recovery Time (trr) Test Circuit Weight: 0.0062 g (typ.)
Unit: mm
