IRF8113GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m
IRF8113GTRPBF
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD- 96251
International
TOR Rectifier IRF8113GPbF
HEXFET© Power MOSFET
Applications
V R max T .
o Synchronous MOSFET for Notebook DSS DS(on) Qg yp
ProcessorPower 30V 5.6mn@Vas=10V 24nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
0 Lead-Free s [EE-l .9 D
o Halogen-Free SE2 B 7:11:13
. s 1:113 f 6m]
Benefits D
. Very Low Roswn) at 4.5V VGS G CE s-CII: D
q Low Gate Charge Top View SO-8
0 Fully Characterized Avalanche Voltage
and Current
q 100% Tested for RG
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 17.2
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 13.8 A
IDM Pulsed Drain Current (D 135
PD @TA = 25°C Power Dissipation © 2.5
PD ©T, = 70°C Power Dissipation G) 1.6 W
Linear Derating Factor 0.02 W/°C
T J Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
fur, Junction-to-Drain Lead © -- 20
Fu, Junction-to-Ambient © _ 50 C/W
Notes co through co are on page 10
1
07/09/09
IRF8r13GPbF
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Veg = 0V, lo = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - VPC Reference to 25°C, ID = 1mA
RDSW, Static Drain-to-Source On-Resistance -- 4.7 5.6 mn Vss = 10V, ID = 17.2A ©
- 5.8 6.8 l/ss = 4.5V, ID =13.8A ©
VGSW Gate Threshold Voltage 1.5 -- 2.2 V VDS = Vss, ID = 250pA
Al/asm Gate Threshold Voltage Coefficient - - 5.4 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 PA l/rss = 24V, Vss = 0V
- - 150 Vos = 24V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 73 - - S l/rss = 15V, ID = 13.3A
Qg Total Gate Charge - 24 36
0951 Pre-Wh Gate-to-Source Charge - 6.2 - l/rss = 15V
0952 Post-Vth Gate-to-Source Charge - 2.0 - nC Ves = 4.5V
di Gate-to-Drain Charge - 8.5 - ID = 13.3A
ngd, Gate Charge Overdrive - 7.3 - See Fig. 16
st Switch Charge (0952 + di) - 10.5 -
Qoss Output Charge - 10 - nC I/os = 10V, I/as = 0V
RG Gate Resistance - 0.8 1.5 Q
tdwn) Turn-On Delay Time - 13 - VDD = 15V, I/ss = 4.5V ©
t, Rise Time - 8.9 - ID = 13.3A
td(oti) Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 3.5 -
Ciss Input Capacitance - 2910 - Ves = 0V
Coss Output Capacitance - 600 - pF Vrss = 15V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © -- 48 mJ
|AR Avalanche Current CD - 13.3 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the if
ISM Pulsed Source Current - - 135 integral reverse G E
(Body Diode) CD p-n junction diode. cl
VsD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 13.3A, VGS = 0V a
tn Reverse Recovery Time - 34 51 ns Tu = 25°C, IF = 13.3A, VDD = 10V
Qrr Reverse Recovery Charge - 21 32 nC di/dt = 100A/ps a
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