IRFB61N15D ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters150V 0.032Ω 60Al Motor Controll U ..
IRFB61N15DPBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.032Ω 60A Motor Control U ..
IRFB7430 ,40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB packageapplications max. 1.3mΩGResonant mode power suppliesI 409A
IRFB61N15D
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
SMPS MOSFET
PD- 94207
IRFB61N15D
HEXFET® Power MOSFET
. V R max I
o High frequency DC-DC converters DSS DS(on) D
0 Motor Control 150V 0-0329 MA
o Uninterrutible Power Supplies
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage
and Current TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 60
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 42 A
IDM Pulsed Drain Current OD 250
Po @TA = 25°C Power Dissipation 2.4 W
Pro @Tc = 25°C Power Dissipation 330
Linear Derating Factor 2.2 W/°C
Ves Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.7 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 1O lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
Notes © through S are on page 8
1
5/3/01
IRFB61N15D International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.18 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.032 n VGs = 10V, ID = 36A ©
Vegan) Gate Threshold Voltage 3.0 - 5.5 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, VGS = 0V
- - 250 Vos = 120V, N/ss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 22 - - S Vros = 50V, ID = 37A
% Total Gate Charge - 95 140 ID = 37A
Qgs Gate-to-Source Charge - 26 39 nC I/re = 120V
di Gate-to-Drain ("Miller") Charge - 45 68 V93 = 10V,
tdmn) Turn-On Delay Time - 18 - VDD = 75V
tr Rise Time - 110 - ns ID = 37A
td(off) Turn-Off Delay Time - 28 - Rs = 1.89
tf Fall Time - 51 - VGS = 10V ©
Ciss Input Capacitance - 3470 - VGS = 0V
Cass Output Capacitance - 690 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Coss Output Capacitance - 4600 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 310 - VGS = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 580 - VGS = 0V, 1/ros = 0V to 120V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 520 m]
IAR Avalanche Current0) - 37 A
EAR Repetitive Avalanche Energy© - 33 ml
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 60 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 250 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 37A, VGS = 0V 69
trr Reverse Recovery Time - 180 270 ns TI, = 25°C, IF = 37A
Qrr Reverse RecoveryCharge - 1340 2010 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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