IRFU9024 ,-60V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 watts
DATA
SHEETS
are possible in typical s ..
IRFU9024. ,-60V Single P-Channel HEXFET Power MOSFET in a I-Pak packageInternational PD-9.655A
ISQR
Rectifier IRFR9024
HEXFET® Power MOSFET IR FU 9024
q Dynam ..
IRFU9024N ,-55V Single P-Channel HEXFET Power MOSFET in a I-Pak packagePD - 9.1506IRFR/U9024NPRELIMINARY®HEXFET Power MOSFETl Ultra Low On-ResistanceDl P-ChannelV = -55VD ..
IRFU9024NPBF ,-55V Single P-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levelsup to 1.5 watts are possible in typical surface mount
IRFU9024PBF , HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28Ω , ID = -8.8A )
IRFU9110 ,-100V Single P-Channel HEXFET Power MOSFET in a I-Pak packagePD-9.519E
International
1:212 Rectifier |RFR91 1O
HEXFET% Power MOSFET I IR FU 91 1 O
. D ..
ISL97644IRZ-T , Boost LDO VON Slice VCOM
ISL97644IRZ-T , Boost LDO VON Slice VCOM
ISL97644IRZ-T , Boost LDO VON Slice VCOM
ISL97645AIRZ , Boost VON Slice VCOM Reset
ISL97645AIRZ-TK , Boost VON Slice VCOM
ISL97646IRZ-T , Boost LDO VON Slice VCOM
IRFR9024-IRFR9024TR-IRFU9024-IRFU9024.
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.655A
TIFR9024
IRFU9024
Vass = -601/
k'ttettriliipt!all
BJJR Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Surface Mount (IRFR9024)
0 Straight Lead (IRFU9024)
0 Available in Tape & Reel
tt P-Channel
0 FastSwitching
RDS(on) = 0.289
S Ir) = -8.8A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ -10 V -8.8
ID @ To = 100°C I Continuous Drain Current, I/cs © -10 V -5.6 A
IDM _:;' Pulsed Drain Current co -35
Pro @ To = 25°C ! Power Dissipation 42 w
Po @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W /° C
Linear Derating Factor (PCB Mount)" 0.020
Vss -,' Gate-to-Source Voltage i20 V
EAs Single Pulse Avalanche Energy 2 300 mJ
IAR Avalanche Current (i) -8.8 A
EAR Repetitive Avalanche Energy Ci) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
To, TSTG Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 3.0 1
Ram Junction-to-Ambient (PCB mount)" - - 50 ' ''C/W
RNA Junction-to-Ambient - - 1 IO
** When mounted on 1" squére PCB (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
lRFR9024, IRFU9p24
Electrical Characteristics a TJ = 25°C (unless otherwise specified)
I Parameter Min. Typ. Max, Units Test conditirns'"
V(enmss Drain-to-Source Breakdown Voltage -60 - - V Vss=OV, |D=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.063 - V/°C Reference to 25°C, kr--.-1mA
Rosmn) Static Drain-to-Source On-Resistance - - J28 Q Vss=-10V, lD=-5.3A ©
Vsam) Gate Threshold Voltage -2.0 - -4.0 V VDS=VGS. ID=-250pA
ggs Forward Transconductance 2.9 - - S N/ss-r-MV, lo=-5.3A ©
loss Drain-to-Source Leakage Current m...--. h -100 WA Vrys=-60V, Vss=0V
_____ ..__-. --.-- w________ - ”___f____ - -500 Vcs=-48V, Vss=0V, TJ=125°C
Tess Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
_---, - _(21terqft_:)tyeRt/ty_stlreltaS - =. - - = 100 VGS=20V
% Total Gate Charge - - 19 ID=-11A
Qgs Gate-to-Source Charge - - 5.4 - nC Vosz-48V
di Gate-to-Drain ("Miller") Charge _ - _ 11 Vss=-10V GD
JM _T_l£n_'QlPLay Time - 13 - - Vorr---30V
tr Rise iimk _ - 68 - ns _ |D=-11A
tam) Turn-Off Delay Time - 15 - [ Re=18£z
ts Fall Time - 29 - RD=2.SQ co
LD Internal Drain Inductance - 4.5 --_ (r2(r(if.iti'nd.') ci', !
nH from package siiilti-st,r',)
Ls Internal Source Inductance - 7.5 - Ind center 6f l l
- - - 7 die contact s l
Ciss Input Capacitance - 570 - ves=ov
Coss Output Capacitance - 360 - pF VDs=-25V
9.. w _RterttT_ratitrSye'11rrct, m _ - 65 - (=1.0MHz
Source-Drain Ratings and Characteristics
_-H---------. Parimeter _ Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -8 8 MOSFET symbol D
(Body Diode) . A showing the l-il
ISM Pulsed Source Current - - -35 integral reverse G l
- -.__(l3c_o,1ypic_sc.l.1), ll, - p-n junction diode. s
Vso Diode Forward Voltage - - -6.3 V TJ=25°C, ls=-8.8A, Ves=0V co
tn Reverse Recovery Time - 100 200 ns TJi-‘250C, IF=-11A
C),, Reverse Recovery Charge i - 0.32 0.64 wc di/dt=100A/ws (4)
1 ton Forward Turn-On Time V Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature
© VDD=-25V, starting TJ22SOC, L=4.5mH
Re=25§2, lAs=-8.8A
G ISDS-1 IA, di/dtS14OA/ps, VDDSV(BR)Dss,
Tufl 50°C
co Pulse width f 300 us; duty cycle 32%.
