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IRS21851-IRS21851SPBF-IRS21851STRPBF
600V Single High Side Driver IC with propagation delay matched output channels in a 8-Lead SOIC package
Data Sheet PD No. 60255 revA
. n I Not recommended for new design:
lnternatio a please uselRS21850
ISBR Rectifier IRSZ1851SPbF
SINGLE HIGH SIDE DRIVER IC
Features Product Summa
q Gate drive supply range from 10 V to 20 V ry
q Undervoltage lockout forVBS and V CC VOFFSET 600 V max.
q 3.3 V and 5 V input logic compatible
0 Tolerant to negative transient voltage kyH- 4 A / 4 A
. Matched propagation delays for all channels
q RoHS compliant VOUT 10 V - 20 V
Description ton/off(typ.) 160 ns & 160 ns
The IRS21851 is a high voltage, high speed power
MOSFET and IGBT single high-side driver with propa-
gation delay matched output channels. Proprietary Package
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The floating logic
input is compatible with standard CMOS or LSTTL ftiiiis
output, down to 3.3 V logic and can be operated up to Jiiii _
600 V above the ground. The output driver features a "i/r'''
high pulse current buffer stage designed for mini-
mum driver cross-conduction. The floating channel
can be used to drive an N-channel power MOSFET 8-Lead SOIC
or IGBT in the high-side conhguration, which oper- IRS21851
ates up to 600 V.
Typical Connection
up to_§00V
Vcc o Vcc vB - P
7: _ (nf
IN c IN HO
- VS C) LOAD
COM - J
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
1
International
TOR Rectifier
IRS21851SPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Symbol Definition Min. Max. Units
Vcc Low-side supply voltage -0.3 20 (Note 1)
VIN Logic input voltage (HIN) COM -0.3 VCC + 0.3
VB High-side floating well supply voltage -0.3 620 (Note 1) V
Vs High-side floating well supply return voltage VB - 20 VB + 0.3
VH0 Floating gate drive output voltage Vs - 0.3 VB + 0.3
st/dt Allowable Vs offset supply transient relative to COM - 50 V/ns
PD Package power dissipation @ TA 3 +25 ''C - 1.25 W
RthJA Thermal resistance, junction to ambient - 100 'CM/
T: Junction temperature -55 150
Ts Storage temperature -55 150 'C
TL Lead temperature (soldering, 10 seconds) - 300
Note 1: All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute
voltages referenced to COM. The offset rating are tested with supplies of (VCC-COM)=(VB-VS)=15 V.
Symbol Definition Min. Max. Units
VCC Low-side supply voltage 10 20
VIN HIN input voltage COM Vcc
VB High-side floating well supply voltage Vs + 10 Vs + 20 V
Vs High-side floating well supply offset voltage Note 2 600
VH0 Floating gate drive output voltage Vs VB
TA Ambient temperature -40 125 ''C
Note 2: Logic operational for Vs of -5 V to 600 V. Logic state held for Vs of -5 V to NBS. (Please refer to the Design
Tip DT97-3 tor more details).
