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MBRD650CT-MBRD660CT
50V 6A Schottky Common Cathode Diode in a D-Pak package
International
1912 Recti
Bulletin PD-20755 rev.C 03/03
MBRD650CT
MBRD660CT
SCHOTTKYRECTFIER
Major Ratings and Characteristics
Descriptionl Features
D-Pak (TO-252AA)
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches)
Common
1 Cathode
. . MBRD650CT . The MBRD650CT, MBRD660CT surface mount, center tap,
Characteristics MBRD660CT Units Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC board.
IHAV) Rectangular 6 A Typical applications are in disk drives, switching power
waveform supplies, converters, free-wheeling diodes, battery charging,
and reverse battery protection.
VRRM 50-60 V .
. Popular D-PAK outline
(FSM @ tp=5pssine 490 A . Center tap configuration
. Small foot print, surface mountable
VF @3Apk,TJ = 125°C 0.65 V . Low forward voltage drop
(per leg) . High frequency operation
TJ range - 40 to 1 50 ''C . Guard ring for enhanced ruggedness and long term reliability
2.33 (0.09) e
6.73 0.26
( ) 2.19 (0O8) ._1*14(°*°4) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.89 (0.03)
- 5-46_(0-21) - 1.27 (0.05) _ 0.58 (0.02) 5.97 (0.24)
l 5.21 (0.20)J: 0.88 (0.03) 0.46 (0.02)
6.45 (0.24)
2 6.22(0.24) 5f58(0,22) 6.48 (0.26)
1.64(0.0 ) 5.97(0.23) 10.42(0A1) 10.67 (0.42)
9.40 (0.37) _
l I 2 3
1 I l 0.51 0.02 2 I
m) i - I MIL. ) 2.54 ((0.10) [I] t -
1.15 (0.04) , I 0 89 0 03 7 1 i 2.28 (009)
1.14 0.04 --3x"'"""'-"'""'" ( . ) 0.58 (0.02) 1.65 (0.06) . - 2x
2x ( L J64 (0 02) -
0.76 (0.03) _ . 0.46 (0.02) 2x Base
1 - Anode Common
2.28 (0.09 2 - Cathode Cathode
2x 3 - Anode
4.57 (0.18) 4 - Cathode
MBRD650CT, MBRD660CT
International
Bulletin PD-20755 rev. C 03103 ISER Rectifier
Voltage Ratings
Part number MBRD65OCT MBRD66OCT
VR Max. DC Reverse Voltage (V) 50 60
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max. Average Forward(Per Leg) 3.0 A 50% duty cycle @ Tc = 128°C, rectangularwave form
Current * See Fig. 5 (Per Device) 6
|FSIVI Max.PeakOneCycle Non-Repetitive 490 5ps Sine or Bus Rect. pulse Follpwing.p.ny rated .
. A . load condition and with
Surge Current * See Fig. 7 75 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-RepetAml. Energy (PerLeg) 6 mJ T J = 25 "C, las = 1 Amp, L= 12 mH
I AR Repetitive Avalanche Current 0.6 A Current decaying Iinearlytozero in 1 psec
(Per Leg) Frequency limited byTJ max.VA=1.5xVR typical
Electrical Specifications
Parameters Value Units Conditions
VFM Max. Forward Voltage Drop 0.7 V @ 3A T = 25 "C
(Per Leg) * See Fig. 1 (1) 0.9 V @ 6A J
0.65 V @ 3A T =125 ''C
0.85 v © 6A J -
lo, Max. Reverse Leakage Current 0.1 mA T J = 25 ''C VR = rated VR
(Per Leg) * See Fig. 2 (1) 15 mA TJ = 125 "C
c, Typ. Junction Capacitance (Per Leg) 145 pF VR = 5Voc (test signal range 100Khz to 1Mhz) 25''C
LS Typical Series Inductance (Per Leg) 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated W)
(1) Pulse VWdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T, Max.JunctionTemperature Range (*) -40to150 °C
Tstg Max. Storage Temperature Range -40 to 150 ''C
Rch Max. Thermal Resistance (PerLeg) 6 'C/W DC operation *See Fig.4
Junction to Case (PerDevice) 3
RthJA Max.ThermaIResistance Junction 80 ''C/W
to Ambient
wt Approximate Weight 0.3(0.01) g (oz.)
Case Style D-Pak Similar to TO-252AA
(*) dP_tot < 1 th I diti f di d it n h t ink
dT) Rth(j-a) erma runaway con I Ion ora IO eonl sow ea SI
2
