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MIG30J106LTOSHIBAN/a13avaiMotor Control Applications


MIG30J106L ,Motor Control ApplicationsMIG30J106LMlf'l'l'lltnl'tnAlvCONTROL
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MIG30J106L
Motor Control Applications
TOSHIBA MIG301106L
TOSHIBA INTELLIGENT POWER MODULE
MllG30ril0tilt,
HIGH POWER SWITCHING APPLICATIONS
MOTOR CO NTRO L APPLICATIONS
The Electrodes are Isolated from Case
0 Three Phase IGBT Inverter Output
0 Gate Drive Circuit
0 Protection Logic
Over Current
Over Temperature
Under Voltage
EQUIVALENT CIRCUIT
D1 D2 D3 D4 D5 D6
C24 C25
C20 C21 C22 C23
OUT GND OUT GND OUT GND OUT GND OUT GND OUT GND
VSEN VSEN VSEN VSEN VSEN VSEN Temp.
Q1 Q2 Q3 CT Q4 CT Q5 CT Q6
VIN Vcc V
VIN Vcc V
VIN Vcc V
IN Vcc GND IN Vcc GND IN Vcc GND
961001 EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
, implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1998-06-05 1/13
TOSHIBA MIG3OJ106L
MAXIMUM RATINGS (Tj=25°C)
ITEM SYMBOL CONDITION RATING UNIT
Supply Voltage VCC P-N 450 V
Collector Emitter Voltage VCES - 600 V
Inverter Part Collector Current (DC) i‘IC Tc=25°C 30 A
Collector Current (Peak) iICP Tc=25°C 60 A
Collector Power Dissipation PC Tc=25°C 50 W
Junction Temperature Tj - 150 T
Supply Voltage VD - 20 V
Input Current IIN - 30 mA
Control Part
Fault Output Voltage VFO - 20 V
Fault Output Current IFO - 10 mA
Operating Temperature Te - -20-- +90 T
All System Storage Temperature Range Tstg - -40---F125 "C
Isolation Voltage V130 (*) 2500 Vrms
(*) AC 1 minute, Defect Current 1mA.
ELECTRICAL CHARACTERISTICS (Tj =25°C)
Inverter part
ITEM SYMBOL 1?iiif TEST CONDITION MIN. TYP. MAX. UNIT
Supply Voltage VCC - P-N - 300 - V
Collector-Emitter . VD = 15V I = 30A - 1.8 2.3
Saturation Voltage VCE (sat) Fig.1 IIN = 10mA IS = 30A, Tj = 125°C - - 3.0 V
Forward Voltage VF Fig.2 IF = 30A - 2.2 2.9 V
ton VCC = 300V - 1.3 2.5
trr 1C = 30A - 0.1 0.2
Switching Time k (on) Fig.3 VD = 15V - 0.8 1.6 gs
toff IIN = 10mA - 1.3 2.8
k (off) L-Load - 0.7 1.0
- - - - 1.0
3:25;? Cut off ICEX Fig.5 VCE = 600V Tj = 125°C - - 20 mA
1998-06-05 2/13
TOSHIBA MIG3OJ106L
CONTROL PART (Tj = 25°C)
ITEM SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
. . - VD=15V High Side - 7 -
Circuit Current D - IIN=10mA Low Side - 21 - mA
Input On Current IIN (0N) - 5.0 -
- V =15V
Input Off Current IIN (OFF) D - 4.0 - mA
Fault Output Current - -
(Normal Operation) IFO - VD=15V, VFO=15V - 10 - mA
. VD=15V (Low Side) 28.5 36 -
. OC F .6
Over Current Trip Level lg VD: 15V (High Side) 48 56 - A
Over Current Cut Off Time toff(OC) - VD=15V - 13 - gs
Over Trip Level 100 110 -
Temperature OT - - "C
Protection Reset Level - 15 -
Under Voltage Trip Level UV - - - 12.0 - V
Protection Reset Level UVr - 12.5 -
Fault Output Pulse Width tFO - VD=15V 8 13 - ms
THERMAL RESISTANCE
ITEM SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Junction to Case Thermal Rth (i-e) - INV, IGBT - 1.8 2.5 o C /W
Resistance Rth (j-e) - INV, FWD - 3.2 4.5
Capacitance (Electrodes-Case) - - - 450 900 pF
1998-06-05 3/13
TOSHIBA
MIG30J106L
TEST CIRCUIT
P(U, V, W)
t Signal (D 8 I
I input
U, V, W (N)
VD (all)
Fig.1 VCE (sat)
VD (all)
Signal
(Hi h)
Signal
VD (all)
Fig.3 Switching Time Test
P (U, V, W)
o- Signal J
input -r V
(all open) CE
|_'._l U, v, w (N)
VD(all)
Fig.5 ICEX
Signal input
P (U, V, W)
ll open)
(v) 8;
LIIJ U, V, W (N)
VD (all)
Fig.2 VF
A _____-___
Fig.4 Switching Test Waveforms
P (U, V, W)
Signal
U, V, W (N) IICI
VD(all)
Fig.6 OC
1998-06-05 4/13
1998-05-27 5/12
OUTLINE
8.5 2.5 2.5
‘25 2.5 10 2.5 2.5 25 2.5 2.5 8‘5
A---c-
-----cr--
----c- A----t-
-----c-
,----c-
Signal Pin d1strioution
GND (U)
38 11.7 13.8
VIN (U)
V0: (U1
GND (v)
VIN(V)
GND (W)
VIN(W)
VCC(W)
10 GND
11 VCC
12 VIN(X)
13 VIN (Y)
14 VIN (Z)
15 VFQ
mewmxovxmm
MIGZOM OGLA — 5
SAFast on Tab #250
[Umt : mm]
TOSHIBA
MIG20J106LA
TOSHIBA MIG3OJ106L
TIMING CHART FOR SHORT CURRENT PROTECTION SEQUENCE
1. Upon occasion of short current condition, at first step, VGE is step-down to one-half of nominal
value in order to reduce IGBT saturation current and finally. VGE is completely interrupted after
some certain time, toff (OC).
2. An error signal output (VFo) goes into 'H' level when the lower arm IGBT is subjected to over
current condition. The timing of VFO output NI' level) is provided at complete interruption of VGE
and the 'H' level is maintained during some certain time duration (tFo).
3. The reset operation is provided on condition that error signal output return to 'L' level after certain
time duration and over current or short current condition is removed, and next input signal turns
from operation "off" to "on".
“L H [H]
VGE II
l I ll l I
0 _ I III I I
l (tofr(PC) ... l .tomoo
"II l l l -m' F-Noise immunizing' I :
l i l Ill ll time2ps l I l
J l..i.A
10 t Ill
IFO tFO tFO (Only low side)
1998-06-05 6/13
TOSHIBA
MIG30J106L
TIMING CHART FOR OVER CURRENT PROTECTION SEQUENCE
Upon occasion of over current condition, at first step, VGE is step-down to one-half of nominal value
in order to reduce IGBT saturation current and finally. VGE is completely interrupted after some
certain time, toff (0C).
. An error signal output (VFo) goes into 'H' level when the lower arm IGBT is subjected to over
current condition. The timing of VFO output NI' level) is provided at complete interruption of VGE
and the 'H' level is maintained during some certain time duration (tFo).
. The reset operation is provided on condition that error signal output return to 'L' level after certain
time duration and over current condition is removed and input signal turns from operation "off" to
L -r l I I
VGE l l l
0 I I I I l
l '/ofr(OC) I I I " t" I I I -m' 'r-Noise immunizine F-
I I ' , I t l time 7prs ' I
I I I I I I I
J J I ...............................................................................
Ic l l l
O I I I
I I I I
I I I I
I I I I
I I I I
I I I I
I I I I
I I I I
I I I I
Yo tF0 tFO (Only low side)
1998-06-05 7/13
TOSHIBA
MIG30J106L
TIMING CHART FOR CONTROL POWER SUPPLY UNDER VOLTAGE PROTECTION SEQUENCE
Upon occasion of control power supply under voltage, gate voltage (VGE) is interrupted and IGBT
moves into 'off-stage'.
(This condition continues between UV Trip Level and UV Reset Level as shown in the chart)
level after the voltage reaches to the trip level.
. An error signal output (VFo) stays in 'H' level until the power supply voltage returns to the reset
The reset operation is provided on condition that power supply voltage returns to the UV reset level
and input signal turns from operation "off" to "on".
_____ ____________ _________________._____________4____
_____ ____________ __-______________._____________4____
(Only low side)
1998-06-05 8/13
TOSHIBA MIG3OJ106L
TIMING CHART FOR OVER TEMPERATURE PROTECTION SEQUENCE
1. Using temperature dependent characteristics of diode on IMS substrate, the case temperature (Tc) is
detected. Upon occasion of over temperature condition, VGE of the lower arm IGBT is interrupted.
(This condition continues between OT Trip Level and OT Reset Level as shown in the chart)
2. An error signal output (VFo) stays in 'H' level until the case temperature goes below the reset level
after the temperature reaches to the trip level.
3. The reset operation is provided on condition that case temperature goes below the OT reset level
and input signal turns from operation "off" to "on".
OT Reset Level
Tc _-_.-.-.-.-.-.-.-.-.-.-.-.-.-.--.-.--.-.-.-.--.-.-.-.-.
(Only low side)
tFO Yo
1998-06-05 9/13
TOSHIBA
APPLICATION
MIG30J106L
Diode bridge
AC input
0.1pzF
@Isolate from each other
W O V U 0 N O P power supply
IPM " +3
N E g a it E
9. E - '-' Cl g g © E g © - - C1 : flf)
> t> > t> > i, > > F t> > 0230ij
O O O O , O O O O CY @Connect near the IGM
terminal
',, R KR krt R R , R:5609
TLP521
A V v V 'xr
A M, M M, M "A
1998-06-05 10/13
TOSHIBA
COLLECTOR CURRENT 10 (A)
[F (A)
FORWARD CURRENT
SWITCHING TIME (/18)
IC - VCE
COMMON
EMITTER .. .
Tc = 25°C if
dc---- 15
VD-- ITV 13
0 w,,,,-''
0 1 2 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
30 Tc=100°C/ //
20 / //
10 ////
0 -...et',.eeV
0 0.5 1.0 1.5 2.0 2.5 3.0
FORWARD VOLTAGE " (V)
SWITCHING TIME - IC
COMMON
EMITTER
VCC = 300V
VD = 15V
Tc = 100°C
1 3 5 10 30 50 100
CORRECTOR CURRENT 10 (A)
PEAK REVERSE RECOVERY CURRENT lrr (X 100A)
SWITCHING TIME (’15)
COLLECTOR CURRENT 10 (A)
REVERSE RECOVERY TIME tn (#8)
M|G30J106L
COMMON
EMITTER . .
Tc= 100''C .. .
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIME - Ic
COMMON
EMITTER
VCC = 300V
VD = 15V
Tc = 25"C
3 5 10 30 50 100
CORRECTOR CURRENT IC (A)
trr, Irr - IF
COMMON
EMITTER
Vcc=300V
VD = 15V
Tc=25°C
3 5 10 30 50 100
FORWARD CURRENT IF (A)
1998-06-05 11/13
TOSHIBA
trr, Irr - IF
COMMON
CATHODE
VCC = 3 00V
VD = 15V
Tc = 100°C
REVERSE RECOVERY TIME c" (/15)
l 3 5 10 30 50 100
PEAK REVERSE RECOVERY CURRENT I” (X100A)
FORWARD CURRENT y (A)
UV, UVr - Te
UNDER-VOLTAGE TRIP LEVEL UV (V)
UNDER-VOLTAGE RESET LEVEL UVr
- 40 0 40 80 120
CASE TEMPERATURE Tc (°C)
Eon, Eoff - le
COMMON
EMITTER
Vcc = 300V
VD = 15V .
INDUCTIVE Eoff ' '
LOAD ' Eon
To = 100°C
SWITCHING LOSS (mJ)
CASE TEMPERATURE Te (T)
COLLECTOR CURRENT 10 (A)
OVERCURRENT 00 (A)
THERMAL TRANSIENT RESISTANCE
RtMt) (°C/ W)
MIG30J106L
REVERSE BIAS SOA
_Reverse bias SOA when pulse width are shorten
--|---|--1--1-- _..-...-.. -. -(Note)
100yteverse bias SOA
10 lr,
Tj s 125°C
VDS17V l
VCC=300V l
(Note) Up to 150A may Ir
1 guarantee if the
condition is listed
0.5 the above.
0 100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE VCE (V)
oc - Te
VD=15V
Rin = 1.51:0
45 Low Side
-30 -10 10 30 50 70 90 110
CASE TEMPERATURE Tc (°C)
Rth (t) - tw
0.001 0.01 0.1 1 10
PULSE WIDTH tw (ms)
1998-06-05 12/13
TOSHIBA MIG3OJ106L
Rth (t) - tw
5 Tc = 25°C
Rum) (”0’ W)
THERMAL TRANSIENT RESISTANCE
0.001 0.01 0.1 1 10
PULSE WIDTH tw (ms)
1998-06-05 13/13

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