SMBTA13 ,NPN Silicon Darlington TransistorsCharacteristicsCollector-emitter breakdown voltage 30 - - VV(BR)CESI = 10 µA, V = 0 C BE30 - -Colle ..
SMBTA13/MMBTA13 ,Darlington TransistorsSMBTA13/ MMBTA13, SMBTA14/ MMBTA14NPN Silicon Darlington Transistors3
MMBTA13-SMBTA13
Darlington Transistors
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
NPN Silicon Darlington Transistors High DC current gain High collector current Low collector-emitter saturation voltage
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
DC Characteristics
AC Characteristics
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Collector-base capacitance CCBO
Emitter-base capacitance CEBO)
EHP00823110V100(CEB0CB0
EB0CB0V,(V)
Total power dissipation Ptot = f(TS)
30
60
90
120
150
180
210
240
270
300
360
tot
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
Transition frequency fT = f (IC) = 5V, f = 20MHz
EHP008251012f
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
Base-emitter saturation voltage10
EHP00827
BEsatV
Collector-emitter saturation voltageC = f (V10
CEsatV
1.510C
DC current gain hFE = f (IC)CE = 5V
EHP0082931001h
Collector cutoff current ICBO = f (TA)CB = 30VCB0
This datasheet has been downloaded from:
www.ic-phoenix.com
Datasheets for electronic components.
