MRF949T1 ,LOW NOISE TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 10 VdcCEOCollector–Base Voltage ..
MRF949T1 ,LOW NOISE TRANSISTORSfeatures a 9 GHz DC current LOW NOISEgain–bandwidth product with excellent linearity. TRANSISTORS• ..
MRF951 , RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF9511LT1 ,NPN Silicon Low Noise, High-Frequency Transistorsfeatures excellent broadband linearity and is offered in a variety of packages.• Fully Implanted Ba ..
MRF957T1 ,NPN Silicon Low Noise, High-Frequency Transistorsfeatures excellent broadband linearity and is offered in a variety of packages.• Fully Implanted Ba ..
MRF9745T1 ,HIGH FREQUENCY POWER TRANSISTOR LDMOS FET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9745T1/D* **The RF Small Signal Line* * N–Ch ..
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MRF949T1
LOW NOISE TRANSISTORS
The RF Line- -
Motorola’s MRF949 is a high performance NPN transistor designed for use in
high gain, low noise small–signal amplifiers. The MRF949 is well suited for low
voltage wireless applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity. Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA High Current Gain–Bandwidth Product, ft = 9 GHz @ 15 mA Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA Fully Ion–Implanted with Gold Metallization and Nitride Passivation Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
MAXIMUM RATINGS
DEVICE MARKINGS(1) To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
Order this document
by MRF949T1/D-
SEMICONDUCTOR TECHNICAL DATA
