MTD5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD5P06VT4G ,Power MOSFET 5 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD5P06VT4G ,Power MOSFET 5 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain−to−Source Voltage V ..
MTD6N10E ,6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100http://onsemi.com3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESIST ..
MTD6N15 ,TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
N8T26AF , Schottky Three-State Quad Bus Driver/Receiver
N8T28F , Schottky Three-State Quad Bus Driver/Receiver
N8T96N , High Speed Hex 3-State Buffers/Inverters
NA555DR ,Precision Timers 8-SOIC -40 to 105Features 3 DescriptionThese devices are precision timing circuits capable of1• Timing From Microsec ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..
MTD5P06V
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
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P–Channel Enhancement–Mode Silicon GateTMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel,
Add –T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
