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NDP4060LNSN/a810avaiN-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP4060LFSCN/a6avaiN-Channel Logic Level Enhancement Mode Field Effect Transistor


NDP4060L ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications.________________________________________________________________________________ DGSAb ..
NDP4060L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
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NDP4060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power 15A, 60V. R = 0.1W @ V = 5V DS(ON) GS field effect transistors are produced using Fairchild's Low drive requirements allowing operation directly from logic proprietary, high cell density, DMOS technology. This drivers. V < 2.0V. GS(TH) very high density process has been especially tailored to minimize on-state resistance, provide superior switching Critical DC electrical parameters specified at elevated performance, and withstand high energy pulses in the temperature. avalanche and commutation modes. These devices are Rugged internal source-drain diode can eliminate the need particularly suited for low voltage applications such as for an external Zener diode transient suppressor. automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, 175°C maximum junction temperature rating. low in-line power loss, and resistance to transients are High density cell design for extremely low R . DS(ON) needed. 2 TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter NDP4060L NDB4060L Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1 MW) DGR GS V Gate-Source Voltage - Continuous ± 16 V GSS - Nonrepetitive (t < 50 µs) ± 25 P I Drain Current - Continuous 15 A D - Pulsed 45 P Total Power Dissipation @ T = 25°C 50 W D C Derate above 25°C 0.33 W/°C Operating and Storage Temperature -65 to 175 °C T ,T J STG T Maximum lead temperature for soldering 275 °C L purposes, 1/8" from case for 5 seconds © 1997 NDP4060L Rev. B / NDB4060L Rev. C
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