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Bulletin I27125 rev. A 04/99
International
ISER Rectifier P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability 25A
Electrically isolated base plate
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved IRI
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters P100 Units
ID 25 A
@ Tc 85 "C
IFSM @50Hz 357 A
@ 60Hz 375 A
Pt @50Hz 637 A23
@ 60Hz 580 A23
Wt 6365 AHs
l/mo, 400 to 1200 v
vINS 2500 v
T J - 40 to 125 "C
1
P100 Series
International
Bulletin 127125 rev. A 04/99 IEER lectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM maximum repetitive 1/Rsy..maximym non- V‘DRM maximum |RRM max.
Type number peak reverse voltage repetitive peak reverse repetitive peak off-state @ T J max.
voltage voltage
V V V mA
P101, P121, P131 400 500 400 10
P102, P122, P132 600 700 600
P103, P123, P133 800 900 800
P104, P124, P134 1000 1100 1000
P105, P125, P135 1200 1300 1200
On-state Conduction
Parameter P100 Units Conditions
|D Maximum DC output current 25 A @ TC = 85°C, full bridge
|TSM Max. peak one-cycle 357 t= 10ms No voltage
lrsu non-repetitive on-state 375 A t= 8.3ms reapplied
or forward current 300 t= 10ms 100% VRRM
315 t= 8.3ms reapplied Sinusoidal half wave,
fl Maximum lit for fusing 637 t= 10ms No voltage Initial T, = T, max,
580 A25 t= 8.3ms reapplied
450 t= 10ms 100% VRRM
410 t= 8.3ms reapplied
|2\/t Maximum I24t for fusing 6365 AN, t = 0.1 to 10ms, no voltage reapplied
Izt for time tx = I24t T (tx
Vnm) Max. value of threshold voltage 0.82 V T., = 125°C
rtl Max. level value of on-state
= o = ' 2
slope resistance 12 mn T J 125 C,Av. power Vmo) 'WM +rt+(lT(RMS))
VTM Max. peak on-state or
1.35 V TJ=25°C, ITM=anT(Av)
VFM forward voltage drop
di/dt Maximum non repetitive rate of 200 Alps T J = 125°C from 0.67 VDRM
rise of turned on current Irs, = nx Imv), IQ = 500mA, tr < 0.5ps, tp > Bus
IH Maximum holding current 130 mA T J = 25°C anode supply = 6NI, resistive load, gate open
IL Maximum latching current 250 mA T J = 25''C anode supply = 6V, resistive load
