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PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count AEC-Q101 qualified
1.3 Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 — 12 August 2009 Product data sheet
Table 1. Quick reference data
TR1; PNP low VCEsat transistorVCEO collector-emitter voltage open base - - −60 V collector current - - −1.5 A
ICM peak collector current single pulse;≤ 1ms −3A
RCEsat collector-emitter saturation
resistance= −1.5A;= −100 mA
[1]- 110 175 mΩ
TR2; NPN resistor-equipped transistorVCEO collector-emitter voltage open base - - 50 V output current - - 100 mA bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch Pinning information Ordering information Marking
Table 2. Pinning base TR1 input (base) TR2 output (collector) TR2 GND (emitter) TR2 collector TR1 emitter TR1 654 23
006aab506
Table 3. Ordering informationPBLS6021D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPBLS6021D KE
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
TR1; PNP low VCEsat transistorVCBO collector-base voltage open emitter - −60 V
VCEO collector-emitter voltage open base - −60 V
VEBO emitter-base voltage open collector - −5V collector current - −1.5 A
ICM peak collector current single pulse;≤ 1ms −3A base current - −300 mA
IBM peak base current single pulse;≤ 1ms −1A
Ptot total power dissipation Tamb≤25°C [1]- 370 mW
[2]- 480 mW
[3]- 630 mW
TR2; NPN resistor-equipped transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +12 V
negative - −10 V output current - 100 mA
ICM peak collector current single pulse;≤ 1ms 100 mA
Ptot total power dissipation Tamb≤25°C [1][2]
[3]- 200 mW
Per devicePtot total power dissipation Tamb≤25°C [1]- 480 mW
[2]- 590 mW
[3]- 760 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 260 K/W
[2]- - 211 K/W
[3]- - 165 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 100 K/W
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch Characteristics
Table 7. CharacteristicsTamb =25 °C unless otherwise specified.
TR1; PNP low VCEsat transistorICBO collector-base cut-off
current
VCB= −60 V; IE =0A - - −100 nA
VCB= −60 V; IE =0A;= 150°C −50 μA
ICES collector-emitter
cut-off current
VCE= −48 V; VBE =0A - - −100 nA
IEBO emitter-base cut-off
current
VEB=−5 V; IC =0A - - −100 nA
hFE DC current gain VCE=−2 V; IC= −100 mA 180 285 -
VCE=−2 V; IC= −500 mA [1] 150 255 -
VCE=−2 V; IC= −1A [1] 140 210 -
VCE=−2 V; IC= −1.5A [1] 120 185 -
VCEsat collector-emitter
saturation voltage= −0.5 A; IB= −50 mA [1]- −65 −100 mV=−1 A; IB= −50 mA [1]- −130 −200 mV=−1 A; IB= −100 mA [1]- −110 −170 mV= −1.5 A; IB= −100 mA [1]- −165 −260 mV
RCEsat collector-emitter
saturation resistance=−1 A; IB= −100 mA [1]- 110 170 mΩ= −1.5 A; IB= −100 mA [1]- 110 175 mΩ
VBEsat base-emitter
saturation voltage= −0.5 A; IB= −50 mA [1]- −0.85 −1V= −1.5 A; IB= −100 mA [1]- −0.93 −1.1 V
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
VBEon base-emitter
turn-on voltage
VCE= −10 V; IC= −1A [1]- −0.75 −1.1 V delay time VCC= −10 V; IC= −1A;
IBon= −50 mA;
IBoff =50mA
-17 - ns rise time - 38 - ns
ton turn-on time - 55 - ns storage time - 350 - ns fall time - 65 - ns
toff turn-off time - 415 - ns transition frequency IC= −50 mA; VCE= −10V;= 100 MHz 150 - MHz collector capacitance VCB= −10 V; IE =ie =0A;
f=1MHz
-30 - pF
TR2; NPN resistor-equipped transistorICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB=0A --1 μA
VCE =30V; IB =0A;= 150°C
--50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A --2 mA
hFE DC current gain VCE =5V; IC =20mA 30 - -
VCEsat collector-emitter
saturation voltage=10 mA; IB= 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC=1 mA - 1.2 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC =20mA 2 1.6 - V bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V; IE =ie =0A;
f=1MHz - 2.5 pF
Table 7. Characteristics …continuedTamb =25 °C unless otherwise specified.
NXP Semiconductors PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
