PBR951 ,NPN UHF wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System IEC 134.SYMBOL PARAMETER CONDI ..
PBRN123ET ,NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhmApplicationsn Digital application in automotive and n Switching loadsindustrial segmentsn Medium cu ..
PBSS2515E ,15 V, 0.5 A NPN low VCEsat (BISS) transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PBSS2515F ,15 V low VCEsat NPN transistor
PBSS2515F ,15 V low VCEsat NPN transistor
PBSS2515F ,15 V low VCEsat NPN transistor
PDC-20-1 ,Circuits - 6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz
PDC-20-3 ,Circuits - 6 to 30 dB COUPLING up to 10W 5 kHz to 2000 MHz
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
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PDI1394L40 ,1394 enhanced AV link layer controller
PBR951
NPN UHF wideband transistor
Philips Semiconductors Product specification
UHF wideband transistor PBR951
FEATURES Small size Low noise Low distortion High gain Gold metallization ensures excellent reliability.
APPLICATIONS Communication and instrumentation systems.
DESCRIPTIONSilicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
PINNING - SOT23
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
UHF wideband transistor PBR951
LIMITING VALUESIn accordance with the Absolute Maximum Rating System IEC 134.
Note Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
UHF wideband transistor PBR951
CHARACTERISTICS =25 °C unless otherwise specified.
Note GUM is the maximum unilateral power gain, assuming S12 is zero.UM 10212112– () 1S222– ()-------------------------------------------------------------- dBlog=
Philips Semiconductors Product specification
UHF wideband transistor PBR951
Philips Semiconductors Product specification
UHF wideband transistor PBR951
Philips Semiconductors Product specification
UHF wideband transistor PBR951
Philips Semiconductors Product specification
UHF wideband transistor PBR951
APPLICATION INFORMATION
SPICE parameters for the PBR951 die
Notes These parameters have not been extracted, the
default values are shown. Cbpb, Cbpe; base-bondpad and emitter-bondpad
capacitance to collector.
List of components (see Fig.12)
