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PBSS2515VPN
15 V low VCEsat NPN/PNP transistor
Philips Semiconductors Product specification V low V CEsat NPN/PNP transistor PBSS2515VPN
FEATURES 300 mW total power dissipation Very small 1.6x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Low collector-emitter saturation voltage High current capability Improved thermal behaviour due to flat lead Replaces two SC75/SC89 packaged low VCEsat
transistors on same PCB area Reduces required PCB area Reduced pick and place costs.
APPLICATION General purpose switching and muting Low frequency driver circuits LCD backlighting Audio frequency general purpose amplifier applications Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTIONNPN/PNP low VCEsat transistor pair in a SOT666 plastic
package.
MARKING
QUICK REFERENCE DATA
PINNING
Philips Semiconductors Product specification V low V CEsat NPN/PNP transistor PBSS2515VPN
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes Transistor mounted on an FR4 printed-circuit board. The only recommended soldering method is reflow soldering.
Philips Semiconductors Product specification V low V CEsat NPN/PNP transistor PBSS2515VPN
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN/PNP transistor PBSS2515VPN
Philips Semiconductors Product specification V low V CEsat NPN/PNP transistor PBSS2515VPN
