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PBSS4140U
40V Low VCEsat NPN Transistor
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140U
FEATURES Low collector-emitter saturation voltage High current capabilities. Improved device reliability due to reduced heat
generation. Enhanced performance over SOT231A generalpurpose
packaged transistors.
APPLICATIONS General purpose switching and muting LCD backlighting Supply line switching circuits Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTIONNPN low VCEsat transistor in a SOT323 plastic package.
PNP complement: PBSS5140U.
MARKING
QUICK REFERENCE DATA
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector1 cm.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140U
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140U
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140U
Philips Semiconductors Product specification V low V CEsat NPN transistor PBSS4140U
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
