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PBSS5240T
40 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5240T
FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat
generation Replacement for SOT89/SOT223 standard packaged
transistor.
APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTIONPNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
MARKING
Note ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
ORDERING INFORMATION
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5240T
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint. Device mounted on a printed-circuit board, single sided copper, tin plated, mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5240T
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Device mounted on a printed-circuit board, single sided copper, tin plated, standard footprint.
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5240T
NXP Semiconductors Product data sheet
40 V, 2 A
PNP low VCEsat (BISS) transistor PBSS5240T
