PBSS5350D ,50 V, 3 A PNP low VCEsat (BISS) transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PBSS5350SS ,50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistorApplicationsn Dual low power switches (e.g. motors, fans)n Automotive1.4 Quick reference dataTable ..
PBSS5350T ,50 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS5350X ,50 V, 3 A PNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA• SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT• Low collector-emitt ..
PBSS5350Z ,50 V low VCEsat PNP transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PBSS5420D ,20 V, 4 A PNP low VCEsat (BISS) transistor
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DGG ,3.3V Parallel interface transceiver/bufferFEATURES DESCRIPTIONThe PDI1284P11 parallel interface chip is designed to provide an• Asynchronous ..
PDI1284P11DL ,3.3 V parallel interface transceiver/bufferINTEGRATED CIRCUITSPDI1284P113.3V Parallel interface transceiver/bufferProduct specification 1999 S ..
PDI1394L40 ,1394 enhanced AV link layer controller
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PDI1394P23BD ,2-port/1-port 400 Mbps physical layer interface
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits Low collector-emitter saturation
voltage VCEsat High current capability High efficiency due to less heat
generation AEC-Q101 qualified Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
1.3 Applications Supply line switching circuits Battery management applications DC-to-DC conversion
1.4 Quick reference data
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter
voltage
open base - - -50 V collector current - - -3 A
ICM peak collector current - - -5 A
RCEsat collector-emitter
saturation resistance =-2A; IB= -200 mA; pulsed; ≤ 300 µs; δ≤ 0.02 ; Tamb =25°C 120 150 mΩ
NXP Semiconductors PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor Pinning information Ordering information Marking
Table 2. Pinning information
Table 3. Ordering informationPBSS5350D TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPBSS5350D 53
NXP Semiconductors PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on an FR4 4-layer PCB.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - -60 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -6 V collector current - -3 A
ICM peak collector current - -5 A
IBM peak base current - -1 A
Ptot total power dissipation Tamb≤25°C [1] - 600 mW
[2] - 750 mW
[3] - 1200 mW junction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - - 208 K/W
[2] - - 160 K/W
pulsed; tp ≤ 50 ms; δ ≤ 0.5.; in free air [2] - - 100 K/W
NXP Semiconductors PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor CharacteristicsTable 7. CharacteristicsICBO collector-base cut-off
current
VCB =-50 V; IE =0 A; Tamb=25°C - - -100 nA
VCB =-50 V; IE =0 A; Tj= 150°C - - -50 µA
IEBO emitter-base cut-off
current
VEB =-5V; IC =0A; Tamb=25°C - - -100 nA
hFE DC current gain VCE =-2V; IC =-500mA; Tamb=25°C 200 - -
VCE =-2V; IC =-1A; pulsed; ≤ 300 µs; δ≤ 0.02 ; Tamb =25°C
200 - -
VCE =-2V; IC =-2A; pulsed; ≤ 300 µs; δ≤ 0.02 ; Tamb =25°C
100 - -
VCEsat collector-emitter
saturation voltage =-500mA; IB =-50 mA; Tamb=25°C ---100 mV =-1A; IB =-50 mA; Tamb=25°C ---180 mV =-2A; IB= -200 mA; pulsed; ≤ 300 µs; δ≤ 0.02 ; Tamb =25°C
---300 mV
RCEsat collector-emitter
saturation resistance 120 150 mΩ
VBEsat base-emitter saturation
voltage
---1.2 V
VBEon base-emitter turn-on
voltage
VCE =-2V; IC =-1A; pulsed; ≤ 300 µs; δ≤ 0.02 ; Tamb =25°C
---1.1 V transition frequency VCE =-5V; IC =-100mA; f=100MHz;
Tamb =25°C
100 - - MHz collector capacitance VCB =-10 V; IE =0 A; ie =0A;
f=1MHz; Tamb =25°C
--40 pF
NXP Semiconductors PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistorNXP Semiconductors PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
