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PBSS5350XPHIN/a3000avai50 V, 3 A PNP low VCEsat (BISS) transistor


PBSS5350X ,50 V, 3 A PNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA• SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT• Low collector-emitt ..
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PBSS5350X
50 V, 3 A PNP low VCEsat (BISS) transistor

Philips Semiconductors Product specification
50 V , 3 A
PNP low V CEsat (BISS) transistor PBSS5350X
FEATURES
SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements.
APPLICATIONS
Power management DC/DC converters Supply line switching Battery charger LCD backlighting. Peripheral drivers Driver in low supply voltage applications (e.g. lamps
and LEDs). Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION

PNP low VCEsat transistor in a SOT89 plastic package.
NPN complement: PBSS4350X.
MARKING
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
50 V , 3 A
PNP low V CEsat (BISS) transistor PBSS5350X
ORDERING INFORMATION
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector1 cm2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector6 cm2. Device mounted on a ceramic printed-circuit board 7 cm2 , single-sided copper, tinplated.
Philips Semiconductors Product specification
50 V , 3 A
PNP low V CEsat (BISS) transistor PBSS5350X
Philips Semiconductors Product specification
50 V , 3 A
PNP low V CEsat (BISS) transistor PBSS5350X
THERMAL CHARACTERISTICS
Notes
Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector1 cm2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector6 cm2. Device mounted on a ceramic printed-circuit board 7 cm2 , single-sided copper, tinplated.
Philips Semiconductors Product specification
50 V , 3 A
PNP low V CEsat (BISS) transistor PBSS5350X
CHARACTERISTICS
=25 °C unless otherwise specified.
Note
Pulse test: tp≤ 300 μs; δ≤ 0.02.
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