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PBSS5540Z
40 V low VCEsat PNP transistor
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5540Z
FEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat
generation.
APPLICATIONS Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp
drivers) MOSFET driver applications.
DESCRIPTIONPNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
MARKING
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5540Z
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Notes Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5540Z
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5540Z
NXP Semiconductors Product data sheet
40 V low V CEsat PNP transistor PBSS5540Z
