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PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
1. Product profile
1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability
1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data[1] Pulse test: tp 300 s; 0.02.
PBSS5630P A
30 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 — 19 March 2010 Product data sheet
Table 1. Quick reference dataVCEO collector-emitter voltage open base - - 30 V collector current - - 6A
ICM peak collector current single pulse; 1ms 7A
RCEsat collector-emitter
saturation resistance= 6A; = 300 mA
[1] -39 58 m
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Table 3. Ordering informationPBSS5630PA HUSON3 plastic thermal enhanced ultra thin small outline package;
no leads; three terminals; body22 0.65 mm
SOT1061
Table 4. Marking codesPBSS5630PA AB
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBO emitter-base voltage open collector - 7V collector current - 6A
ICM peak collector current single pulse; 1ms 7A base current - 600 mA
Ptot total power dissipation Tamb25C [1] -500 mW
[2] -1 W
[3] -1.4 W
[4] -2.1 W
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
6. Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint. junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 5. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1] -- 250 K/W
[2] -- 125 K/W
[3] -- 90 K/W
[4] -- 60 K/W
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistorNXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
7. Characteristics[1] Pulse test: tp 300 s; 0.02.
Table 7. CharacteristicsTamb =25 C unless otherwise specified.
ICBO collector-base
cut-off current
VCB= 24 V; IE =0A - - 100 nA
VCB= 24 V; IE =0A; = 150C 50 A
ICES collector-emitter
cut-off current
VCE= 24 V; VBE =0V - - 100 nA
IEBO emitter-base
cut-off current
VEB= 5V; IC =0A - - 100 nA
hFE DC current gain VCE= 2V [1]= 0.5A 230 345 -=1A 220 320 -=2A 190 275 -=6A 110 155 -
VCEsat collector-emitter
saturation voltage= 0.5 A; IB= 50 mA [1]- 25 40 mV= 1A; IB= 50 mA [1]- 50 80 mV= 1A; IB= 10 mA [1]- 80 130 mV= 2A; IB= 20 mA [1]- 135 210 mV= 3A; IB= 30 mA [1]- 215 325 mV= 4A; IB= 400 mA [1]- 150 230 mV= 6A; IB= 300 mA [1]- 235 350 mV
RCEsat collector-emitter
saturation resistance= 6A; IB= 300 mA [1]- 3958m
VBEsat base-emitter
saturation voltage= 1A; IB= 10 mA [1]- 0.75 0.9 V= 6A; IB= 300 mA [1]- 1.03 1.1 V
VBEon base-emitter
turn-on voltage
VCE= 2V; IC= 2A [1]- 0.76 0.9 V delay time VCC= 9V; IC= 2A;
IBon= 0.1A;
IBoff =0.1A
-19 -ns rise time - 59 - ns
ton turn-on time - 78 - ns storage time - 265 - ns fall time - 55 - ns
toff turn-off time - 320 - ns transition frequency VCE= 10V; = 100 mA;
f=100MHz 80 - MHz collector capacitance VCB= 10V; =ie =0 A; f=1 MHz 7590pF
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
