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Partno	Mfg	Dc	Qty	Available	Descript
PEMD48	NXP/PHILIPS	N/a	4000	avai	NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟 and R1 = 2.2 k惟, R2 = 47 k惟

PEMD48 ,NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟 and R1 = 2.2 k惟, R2 = 47 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted Devi ..
PEMD6 ,R2 = openLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMH1 ,NPN/NPN resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟Features and benefits  100 mA output current capability Reduces component count Built-in bias re ..
PEMH10 ,R1 = 2.2 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PEMH11 ,R1 = 10 kOhm, R2 = 10 kOhmapplications1.4 Quick reference data Table 2. Quick reference dataSymbol Parameter Conditions Min T ..
PEMH13 ,R1 = 4.7 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits  100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..

PEMD48
NPN/PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟 and R1 = 2.2 k惟, R2 = 47 k惟
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
Device (SMD) plastic packages.
1.2 Features and benefits
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMD48; PUMD48
NPN/PNP resistor-equipped transistors;
R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k
Rev. 6 — 24 January 2012 Product data sheet
Table 1. Product overview
PEMD48 SOT666 - ultra small and flat lead
PUMD48 SOT363 SC-88 very small 100 mA output current capability  Reduces component count Built-in bias resistors  Reduces pick and place costs Simplifies circuit design  AEC-Q101 qualified
Table 2. Quick reference data
Per transistor; for the PNP transistor with negative polarity
VCEO collector-emitter voltage open base - - 50 V output current - - 100 mA
Transistor TR1 (NPN) bias resistor 1 (input) 33 47 61 k
R2/R1 bias resistor ratio 0.8 1.0 1.2
Transistor TR2 (PNP) bias resistor 1 (input) 1.54 2.20 2.86 k
R2/R1 bias resistor ratio 17 21 26
NXP Semiconductors PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code.
Table 3. Pinning
PEMD48 (SOT666)
PUMD48 (SOT363)
Table 4. Ordering information
PEMD48 - plastic surface-mounted package; 6 leads SOT666
PUMD48 SC-88 plastic surface-mounted package; 6 leads SOT363
Table 5. Marking codes
PEMD48 48
PUMD48 4*8
NXP Semiconductors PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector
TR1 (NPN) - 10 V
TR2 (PNP) - 5V input voltage TR1
positive - +40 V
negative - 10 V
input voltage TR2
positive - +5 V
negative - 12 V output current - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb25C
PEMD48 (SOT666) [1][2] -200 mW
PUMD48 (SOT363) [1] -200 mW
Per device
Ptot total power dissipation Tamb25C
PEMD48 (SOT666) [1][2] -300 mW
PUMD48 (SOT363) [1] -300 mW junction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
6. Thermal characteristics
NXP Semiconductors PEMD48; PUMD48
NPN/PNP resistor-equipped transistors
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 7. Thermal characteristics
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
Tamb25C
PEMD48 (SOT666) [1][2]- - 625 K/W
PUMD48 (SOT363) [1]- - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
Tamb25C
PEMD48 (SOT666) [1][2]- - 417 K/W
PUMD48 (SOT363) [1]- - 417 K/W

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