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PEMH14NXPN/a900avaiNPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
PEMH14PHIN/a4000avaiNPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open


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PEMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
Product profile1.1 General description
NPN/NPN Resistor-Equipped Transistors (RET).
1.2 Features
Built-in bias resistor Simplifies circuit design Reduces component count Reduces pick and place costs
1.3 Applications
Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data

PEMH14; PUMH14
NPN/NPN resistor-equipped transistors;
R1 = 47 kΩ, R2 = open
Rev. 03 — 15 November 2009 Product data sheet
Table 1. Product overview

PEMH14 SOT666 - PEMD14 PEMB14
PUMH14 SOT363 SC-88 PUMD14 PUMB14
Table 2. Quick reference data

VCEO collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA bias resistor 1 (input) 33 47 61 kΩ
NXP Semiconductors PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open Pinning information
Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1
Table 4. Ordering information

PEMH14 - plastic surface mounted package; 6 leads SOT666
PUMH14 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5. Marking codes

PEMH14 5C
PUMH14 H1*
NXP Semiconductors PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor

VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1] -200 mW
SOT666 [1][2] -200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device

Ptot total power dissipation Tamb≤25°C
SOT363 [1] -300 mW
SOT666 [1][2] -300 mW
Table 7. Thermal characteristics
Per transistor

Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1] -- 625 K/W
SOT666 [1][2] -- 625 K/W
Per device

Rth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1] -- 416 K/W
SOT666 [1][2] -- 416 K/W
NXP Semiconductors PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.
Per transistor

ICBO collector-base cut-off
current
VCB =50V; IE =0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A; =150°C 50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC =0A - - 100 nA
hFE DC current gain VCE =5V; IC=1 mA 100 - -
VCEsat collector-emitter
saturation voltage =10mA; IB =0.5 mA - - 150 mV bias resistor 1 (input) 33 47 61 kΩ collector capacitance VCB =10V; IE =ie =0A; 1MHz 2.5 pF
NXP Semiconductors PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open Package outline Packing information

[1] For further information and the availability of packing methods, see Section12.
[2] T1: normal taping
[3] T2: reverse taping
Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PEMH14 SOT666 2 mm pitch, 8 mm tape and reel - - -315- mm pitch, 8 mm tape and reel - -115- -
PUMH14 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115- - -135 mm pitch, 8 mm tape and reel; T2 [3] -125- - -165
NXP Semiconductors PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open
10. Revision history
Table 10. Revision history
PEMH14_PUMH14_3 20091115 Product data sheet - PEMH14_PUMH14_2
Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content. Figure 3 “Package outline SOT363 (SC-88)”: updated
PEMH14_PUMH14_2 20050429 Product data sheet - PUMH14_1
PUMH14_1 20031016 Product specification - -
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