PEMH24 ,NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmapplications1.4 Quick reference dataTable 2: Quick reference dataSymbol Parameter Conditions Min Ty ..
PEMH30 ,NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
PEMH4 ,NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open DISCRETE SEMICONDUCTORS DATA SHEETPEMH4; PUMH4NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R ..
PEMH7 ,NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open
PEMH7 ,NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open DISCRETE SEMICONDUCTORS DATA SHEETPEMH7; PUMH7NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, ..
PEMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIC7516 , Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types
PIMD2 ,NPN/PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SM ..
PIMD3 ,PEMD3; PIMD3; PUMD3; NPN/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhmFeatures and benefits 100 mA output current capability Reduces component count Built-in bias re ..
PIMH9 ,R1 = 10 kOhm, R2 = 47 kOhmLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
PIMN31 ,500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhmApplicationsn Digital application in automotive and industrial segmentsn Switching loads1.4 Quick r ..
PEMH24
NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
Product profile1.1 General descriptionNPN/NPN Resistor-Equipped T ransistors (RET).
1.2 Features Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs
1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications
1.4 Quick reference data
PEMH24; PUMH24
NPN/NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Table 1: Product overviewPEMH24 SOT666 - PEMD24 PEMB24
PUMH24 SOT363 SC-88 PUMD24 PUMB24
Table 2: Quick reference dataVCEO collector-emitter voltage open base - - 50 V output current (DC) - - 20 mA bias resistor 1 (input) 70 100 130 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Philips Semiconductors PEMH24; PUMH24 Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning GND (emitter) TR1 input (base) TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 output (collector) TR1 001aab555 4 23
sym063
Table 4: Ordering informationPEMH24 - plastic surface mounted package; 6 leads SOT666
PUMH24 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codesPEMH24 6T
PUMH24 H8*
Philips Semiconductors PEMH24; PUMH24 Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V input voltage
positive - +40 V
negative - −10 V output current (DC) - 20 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb≤25°C
SOT363 [1]- 200 mW
SOT666 [1][2]- 200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per devicePtot total power dissipation Tamb≤25°C
SOT363 [1]- 300 mW
SOT666 [1][2]- 300 mW
Philips Semiconductors PEMH24; PUMH24 Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Characteristics
Table 7: Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 625 K/W
SOT666 [1][2]- - 625 K/W
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT363 [1]- - 416 K/W
SOT666 [1][2]- - 416 K/W
Table 8: CharacteristicsTamb = 25 °C unless otherwise specified.
Per transistorICBO collector-base cut-off
current
VCB =50V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current
VCE =30V; IB =0A - - 1 μA
VCE =30V; IB =0A;= 150°C
--50 μA
IEBO emitter-base cut-off
current
VEB =5V; IC=0A --50 μA
hFE DC current gain VCE =5V; IC =5mA 80 - -
VCEsat collector-emitter
saturation voltage=5 mA; IB= 0.25 mA - - 150 mV
VI(off) off-state input voltage VCE =5V; IC= 100μA - 1.1 0.5 V
VI(on) on-state input voltage VCE= 0.3 V; IC=1 mA 3 1.5 - V bias resistor 1 (input) 70 100 130 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2 collector capacitance VCB =10V;IE =ie =0A;=1 MHz - 2.5 pF
Philips Semiconductors PEMH24; PUMH24
Philips Semiconductors PEMH24; PUMH24 Package outline Packing information[1] For further information and the availability of packing methods, see Section15.
[2] T1: normal taping
[3] T2: reverse taping
Table 9: Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
PEMH24 SOT666 2 mm pitch, 8 mm tape and reel - - -315 - mm pitch, 8 mm tape and reel - -115 - -
PUMH24 SOT363 4 mm pitch,8 mm tape and reel;T1 [2] -115- - -135 mm pitch,8 mm tape and reel;T2 [3] -125- - -165
